Shinji Shirakawa
Hitachi
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Publication
Featured researches published by Shinji Shirakawa.
IEEE Transactions on Electron Devices | 2013
Satoshi Shimamoto; Yohei Yanagida; Shinji Shirakawa; Kenji Miyakoshi; Takayuki Oshima; Junichi Sakano; Shinichiro Wada; Junji Noguchi
High-performance p-channel lateral double-diffused MOS (LDMOS) transistors designed to operate in a wide voltage range from 35 to 200 V and built using silicon-on-insulator LDMOS platform technology were studied. A novel channel structure was applied, and consequently, a high saturation drain current of 172 μA/μm in the 200-V p-channel LDMOS transistor was achieved, which is comparable to that of an n-channel LDMOS transistor. A low on -resistance of 3470 mΩ·mm2 was obtained while maintaining high on- and off-state breakdown voltages of -240 and -284 V. The 35-200-V LDMOS transistors with low on-resistance were also demonstrated by optimizing the layout, i.e., the reduced surface field structure and field plates.
international symposium on power semiconductor devices and ic's | 2011
Satoshi Shimamoto; Yohei Yanagida; Shinji Shirakawa; Kenji Miyakoshi; Toshinori Imai; Takayuki Oshima; Junichi Sakano; Shinichiro Wada
We have developed high performance Pch-LDMOS transistors in wide range rated voltage from 35V to 200V SOI LDMOS platform technology. By applying a novel channel structure, a high saturation drain current of 172 μA/μm in the 200V Pch-LDMOS transistor was achieved, which is comparable to that of the Nch-LDMOS transistor. A low on-resistance of 3470 mΩ∗ mm2 was obtained while maintaining high on- and off-state breakdown voltages of −240 and −284 V. The 35V to 200V LDMOS transistors with a competitive low on-resistance were also demonstrated by layout optimization such as RESURF structure and field plate.
Archive | 2009
Junichi Sakano; Kenji Hara; Shinji Shirakawa
Archive | 2002
Shinji Shirakawa; Akira Mishima; Hideshi Fukumoto; Keiichi Mashino; Toshiyuki Innami
Archive | 2001
Osamu Suzuki; Shinji Shirakawa; Akira Mishima; Toshiyuki Innami; Shinichi Fujino; Hideaki Mori; Kenji Takahashi; Keiichi Mashino; Hiromichi Anan
Archive | 2005
Masamitsu Inaba; Masahiro Iwamura; Keiichi Masuno; Mutsuhiro Mori; Shinji Shirakawa; Masanori Tsuchiya; Tatsumi Yamauchi; 雅範 土屋; 敬一 増野; 辰美 山内; 将弘 岩村; 睦宏 森; 真司 白川; 政光 稲葉
Archive | 2001
Shinji Shirakawa; Akira Mishima; Keiichi Mashino; Toshiyuki Innami; Shinichi Fujino; Hiromichi Anan; Yoshitaka Ochiai
Archive | 2007
Hiroshi Kanazawa; Takashi Kobayashi; Noriaki Hino; Shinji Shirakawa; Keiichi Mashino; Masanori Tsuchiya
Archive | 2000
Shinji Shirakawa; Hideshi Fukumoto; Akira Mishima; Keiichi Mashino; Toshiyuki Innami
international symposium on power semiconductor devices and ic's | 2010
Junichi Sakano; Shinji Shirakawa; Kenji Hara; S. Yabuki; Shinichiro Wada; Junji Noguchi; M. Wada