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Featured researches published by Shuojin Hang.


Proceedings of SPIE | 2012

Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Hiroshi Mizuta; Zakaria Moktadir; Stuart A. Boden; Nima Kalhor; Shuojin Hang; Marek E. Schmidt; Nguyen Tien Cuong; Dam Hieu Chi; Nobuo Otsuka; Manoharan Muruganathan; Yoshishige Tsuchiya; Harold Chong; H.N. Rutt; D.M. Bagnall

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.


ieee silicon nanoelectronics workshop | 2014

Unipolar conduction induced by defects in graphene nanowire field effect transistors

Zakaria Moktadir; Shuojin Hang; Hiroshi Mizuta

We present results on electronic transport in disordered graphene nanowire field effect transistors. We show the emergence of unipolar transport where increasing defects density yield almost an insulating behaviour in n-type graphene whilst showing a metallic behaviour in p-type graphene. It is also shown that the Fermi level is pinned at the Dirac point and the conductivity of n-type graphene is pinned to the minimum conductivity at the Dirac point.


ieee silicon nanoelectronics workshop | 2014

Irradiation induced tunnel barrier in side-gated graphene nanoribbon

Shuojin Hang; Zakaria Moktadir; Hiroshi Mizuta

We investigated a method of forming tunnel barriers in monolayer graphene nanoribbon (GNR) using controlled ion irradiation. By using a helium ion microscope (HIM), we are able to reduce the width of exposure area down to 5nm. Source-drain conductance of side-gated GNR has been measured and the gate capacitances were extracted.


The Japan Society of Applied Physics | 2013

Metal-Insulating transition in disordered graphene nanoribbons controlled by helium ion irradiation

Zakaria Moktadir; Shuojin Hang; K. Higashimine; Muruganathan Manoharan; Hiroshi Mizuta; J. Reynolds

We report a mobility transition in graphene nanoribbons subject to disorder induced by irradiating helium ions. At small irradiation doses defects are created in graphene, enhancing scattering and decreasing the mobility. As the dose is increased further an abrupt transition into an insulating phase is observed characterised by a decrease in electron mobility by more than 5 orders of magnitude. Transmission Electron Microscopy images reveal that heavily He+ irradiated graphene loses its crystallinity as carbon atoms are dislodged from their position by incident ions and reconstruct into an insulating, topologically disordered two-dimensional sp carbon network, where Anderson localisation may possibly play a major role.


ieee international conference on solid-state and integrated circuit technology | 2012

Downscaled graphene nanodevices: Fabrication and ab initio study

Hiroshi Mizuta; Zakaria Moktadir; Stuart A. Boden; Nima Kalhor; Shuojin Hang; Marek E. Schmidt; Nguyen Tien Cuong; Dam Hieu Chi; Nobuo Otsuka; Muruagnathan Manoharan; Yoshishige Tsuchiya; Harold Chong; H.N. Rutt; D.M. Bagnall

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.


Carbon | 2014

Raman Study of Damage Extent in Graphene Nanostructures Carved by High Energy Helium Ion Beam

Shuojin Hang; Zakaria Moktadir; Hiroshi Mizuta


Carbon | 2015

Defect-induced Fermi level pinning and suppression of ambipolar behaviour in graphene

Zakaria Moktadir; Shuojin Hang; Hiroshi Mizuta


Archive | 2013

Ultra-fine graphene nanoelectronic devices carved with tightly focused helium ion beam

Shuojin Hang; Zakaria Moktadir; Hiroshi Mizuta


Solid-state Electronics | 2016

A circuit model for defective bilayer graphene transistors

Ime J. Umoh; Zakaria Moktadir; Shuojin Hang; Tom J. Kazmierski; Hiroshi Mizuta


Archive | 2014

Irradiation induced tunnel barrier in graphene

Shuojin Hang; Zakaria Moktadir; Hiroshi Mizuta

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Hiroshi Mizuta

Japan Advanced Institute of Science and Technology

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Nima Kalhor

University of Southampton

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H.N. Rutt

University of Southampton

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Stuart A. Boden

University of Southampton

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D.M. Bagnall

University of New South Wales

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Harold Chong

University of Southampton

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Dam Hieu Chi

Japan Advanced Institute of Science and Technology

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Marek E. Schmidt

Japan Advanced Institute of Science and Technology

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