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Dive into the research topics where Simon Ruffell is active.

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Featured researches published by Simon Ruffell.


Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2015

Directed ribbon-beam capability for novel etching applications

Simon Ruffell; Anthony Renau

The authors describe a new directed ribbon-beam system capable of a combination of plasma-based processing with that of a ribbon-ion-beam implantation system. In particular, the authors describe how they are utilizing this system for novel reactive-ion-etching processing with high directionality in the planes perpendicular to the wafer surface and at angles non-normal to the wafer. Examples are shown on nanopatterned structures. The authors demonstrate how these results and capability can solve several problems in current and future device patterning.


Archive | 2013

MAGNETIC MEMORY AND METHOD OF FABRICATION

Alexander C. Kontos; Steven Sherman; John J. Hautala; Simon Ruffell


Archive | 2014

TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING

Steven R. Sherman; Simon Ruffell; John J. Hautala; Adam Brand


Archive | 2016

Method for selectively depositing a layer on a three dimensional structure

Simon Ruffell; Thomas R. Omstead; Anthony Renau


Archive | 2014

Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films

Swaminathan Srinivasan; Fareen Adeni Khaja; Simon Ruffell; John J. Hautala


Archive | 2012

Compound semiconductor growth using ion implantation

Morgan D. Evans; Simon Ruffell


Archive | 2017

NON-UNIFORM GATE OXIDE THICKNESS FOR DRAM DEVICE

Simon Ruffell; Arvind Kumar; Tristan Ma; Kyu-Ha Shim; John J. Hautala; Steven Sherman


Archive | 2017

APPARATUS AND METHOD FOR CARBON FILM DEPOSITION PROFILE CONTROL

Alex Tsung-Liang Chen; Simon Ruffell


Archive | 2016

TECHNIQUES TO ENGINEER NANOSCALE PATTERNED FEATURES USING IONS

Simon Ruffell; John J. Hautala; Adam Brand; Huixiong Dai


Archive | 2015

FinFET spacer etch with no fin recess and no gate-spacer pull-down

Simon Ruffell

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