Andrew M. Waite

Achieving Uniform Device Performance by Using Advanced Process Control and SuperScan

As CMOS technologies advance beyond the 45 nm feature size, device architectures and semiconductor manufacturing processes are becoming more complex. Process variations from multiple process modules lead to disparities in device performance. Several key processes such as gate patterning are typically under advanced process control (APC). However, a critical challenge for APC is the embedded SiGe (eSiGe) selective epitaxial process (used for PFET stress‐engineering), which may have across‐wafer radial variation that significantly impact PFET overlap capacitance (Cov) and threshold voltage (Vtsat). As a counter‐measure to address this issue in a 45 nm SOI CMOS platform for advanced logic products, the SuperScan™ option was employed for the PFET extension implant using a Varian VIISta™ high‐current single‐wafer implanter. The SuperScan technology implants wafers with tailored implant dose maps, to correct for non‐implant‐related across‐wafer process non‐uniformities. The SuperScan technique resulted in signi...

Process characterization for hydrogen and helium implantation

Implantation of light ion species, such as Hydrogen and Helium, is widely used to modify silicon electronic properties by adjustment of charge carrier lifetime. Hydrogen-related donors can also be induced in great depth with MeV implants especially for power device applications. However, the radiation related safety concerns require the Hydrogen be used separately from other dopant species normally used in semiconductor manufacturing process. For implanters only equipped with Hydrogen, Helium, or Argon, the implantation process is uniquely challenging to qualify, especially for fabs without ThermaWave or other similar metrology tools. In this paper, we will discuss the characterization of Hydrogen and Helium using double implant technology for angle verification and SPC purpose. Also, TCAD simulation and SRIM studies are used to explain observed multiple Hydrogen peaks for near zero tilt implant profiles.