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Dive into the research topics where Steven Avanzino is active.

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Featured researches published by Steven Avanzino.


international electron devices meeting | 2005

Non-volatile resistive switching for advanced memory applications

An Chen; Sameer Haddad; Yi-Ching Wu; Tzu-Ning Fang; Zhida Lan; Steven Avanzino; Suzette K. Pangrle; Matthew Buynoski; Manuj Rathor; Wei Cai; Nicholas H. Tripsas; Colin S. Bill; Michael A. Vanbuskirk; Masao Taguchi

A non-volatile resistive switching mechanism based on trap-related space-charge-limited-conduction (SCLC) is proposed. Excellent memory characteristics have been demonstrated using near-stoichiometric cuprous oxide (CuxO) metal-insulator-metal (MIM) structures: low-power operation, fast switching speed, superior temperature characteristics, and long retention. This MIM memory cell is fully compatible with standard CMOS process. The proposed switching mechanism is a strong contender for high density and low cost memory applications


international electron devices meeting | 2006

Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode

Tzu-Ning Fang; Swaroop Kaza; Sameer Haddad; An Chen; Yi-Ching Wu; Zhida Lan; Steven Avanzino; Dongxiang Liao; Chakku Gopalan; Seungmoo Choi; Sara Mahdavi; Matthew Buynoski; Yvonne Lin; Christie Marrian; Colin S. Bill; Michael A. Vanbuskirk; Masao Taguchi

A metal-insulator-metal (MIM) device based on a Cu2O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu2O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior of the device during erase with Ni and Ti top electrodes suggests different mechanisms. This paper focuses on Cu/Cu2O/Ni devices and proposes a thermal erase model, based on power calculations and temperature dependence


Archive | 2004

Diode array architecture for addressing nanoscale resistive memory arrays

Nicholas H. Tripsas; Colin S. Bill; Michael A. Vanbuskirk; Matthew Buynoski; Tzu-Ning Fang; Wei Daisy Cai; Suzette K. Pangrle; Steven Avanzino


Archive | 2011

Diode and resistive memory device structures

Manuj Rathor; An Chen; Steven Avanzino; Suzette K. Pangrle


Archive | 2004

Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film

Steven Avanzino; Minh Tran


Archive | 2006

Method of forming copper sulfide layer over substrate

Steven Avanzino


Archive | 2011

Metal-insulator-metal-insulator-metal (MIMIM) memory device

Manuj Rathor; Suzette K. Pangrle; Steven Avanzino; Zhida Lan


Archive | 2004

Protection of active layers of memory cells during processing of other elements

Steven Avanzino; Igor Sokolik; Suzette K. Pangrle; Nicholas H. Tripsas; Jeffrey A. Shields


Archive | 2007

Method to prevent alloy formation when forming layered metal oxides by metal oxidation

Steven Avanzino; Jeffrey A. Shields; Joffre Bernard; Suzette K. Pangrle


Archive | 2007

Erase, programming and leakage characteristics of a resistive memory device

Tzu-Ning Fang; Steven Avanzino; Swaroop Kaza; Dongxiang Liao; Christie Marrian; Sameer Haddad

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