Sung-Jin Choi

A Polydimethylsiloxane (PDMS) Sponge for the Selective Absorption of Oil from Water

We present a sugar-templated polydimethylsiloxane (PDMS) sponge for the selective absorption of oil from water. The process for fabricating the PDMS sponge does not require any intricate synthesis processes or equipment and it is not environmentally hazardous, thus promoting potential in environmental applications. The proposed PDMS sponge can be elastically deformed into any shape, and it can be compressed repeatedly in air or liquids without collapsing. Therefore, absorbed oils and organic solvents can be readily removed and reused by simply squeezing the PDMS sponge, enabling excellent recyclability. Furthermore, through appropriately combining various sugar particles, the absorption capacity of the PDMS sponge is favorably optimized.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5u2009×u2009105 times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5u2009×u2009105 with a 500u2009nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol

Recent electronic applications require an efficient computing system that can perform data processing with limited energy consumption. Inspired by the massive parallelism of the human brain, a neuromorphic system (hardware neural network) may provide an efficient computing unit to perform such tasks as classification and recognition. However, the implementation of synaptic devices (i.e., the essential building blocks for emulating the functions of biological synapses) remains challenging due to their uncontrollable weight update protocol and corresponding uncertain effects on the operation of the system, which can lead to a bottleneck in the continuous design and optimization. Here, we demonstrate a synaptic transistor based on highly purified, preseparated 99% semiconducting carbon nanotubes, which can provide adjustable weight update linearity and variation margin. The pattern recognition efficacy is validated using a device-to-system level simulation framework. The enlarged margin rather than the linear weight update can enhance the fault tolerance of the recognition system, which improves the recognition accuracy.

Carbon Nanotube Synaptic Transistor Network for Pattern Recognition

Inspired by the human brain, a neuromorphic system combining complementary metal-oxide semiconductor (CMOS) and adjustable synaptic devices may offer new computing paradigms by enabling massive neural-network parallelism. In particular, synaptic devices, which are capable of emulating the functions of biological synapses, are used as the essential building blocks for an information storage and processing system. However, previous synaptic devices based on two-terminal resistive devices remain challenging because of their variability and specific physical mechanisms of resistance change, which lead to a bottleneck in the implementation of a high-density synaptic device network. Here we report that a three-terminal synaptic transistor based on carbon nanotubes can provide reliable synaptic functions that encode relative timing and regulate weight change. In addition, using system-level simulations, the developed synaptic transistor network associated with CMOS circuits can perform unsupervised learning for pattern recognition using a simplified spike-timing-dependent plasticity scheme.

High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

High speed thin film transistors (TFTs) are in great need for next-generation TVs which will employ ultra high definition resolution (3840×2160) panels and possibly include multi-view autostereoscopic 3D technology which will negate the use of glasses for 3D viewing mode. In order to achieve high mobility devices, various types of metal oxide semiconductors have been extensively studied, including the most popular In-Ga-Zn-O, with typical field effect mobilities ranging between 10 to 30 cm2/Vs. Although these numbers are much higher than that of conventional amorphous silicon (0.5~1.0 cm2/Vs) TFTs, there is a strong demand for even higher mobility semiconductors which can exhibit excellent uniformity over a large area.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76u2009cm2 V−1 sec−1), a low operating voltage (less than 4u2009V), a high current on/off ratio (3u2009×u2009104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

Instability mechanism of amorphous InGaZnO thin-film transistors under negative bias stress (NBS) was investigated. After strong NBS stress, we observed a negligible change in the subthreshold swing which is strongly dependent on the subgap density-of-states (DOS). On the other hand, there was substantial increase in the drain current at above-threshold operation. Therefore, the dominant mechanism of the NBS-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and Technology Computer-Aided Design simulation.

Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electronics

Transient electronics represent an emerging class of technology comprising materials that can vanish in a controlled manner in response to stimuli. In contrast to conventional electronic devices that are designed to operate over the longest possible period, transient electronics are defined by operation typically over a short and well-defined period; when no longer needed, transient electronics undergo self-deconstruction and disappear completely. In this work, we demonstrate the fabrication of thermally triggered transient electronic devices based on a paper substrate, specifically, a nitrocellulose paper. Nitrocellulose paper is frequently used in acts of magic because it consists of highly flammable components that are formed by nitrating cellulose by exposure to nitric acid. Therefore, a complete and rapid destruction of electronic devices fabricated on nitrocellulose paper is possible without producing any residue (i.e., ash). The transience rates can be modified by controlling radio frequency signal-induced voltages that are applied to a silver (Ag) resistive heater, which is stamped on the backside of the nitrocellulose paper. The Ag resistive heater was prepared by a simple, low-cost stamping fabrication, which requires no harsh chemicals or complex thermal treatments. For the electronics on the nitrocellulose paper substrate, we employed semiconducting carbon nanotube (CNT) network channels in the transistor for superior electrical and mechanical properties.

Transparent, Flexible Strain Sensor Based on a Solution-Processed Carbon Nanotube Network

The demands for transparent, flexible electronic devices are continuously increasing due to their potential applications to the human body. In particular, skin-like, transparent, flexible strain sensors have been developed to realize multifunctional human-machine interfaces. Here, we report a sandwich-like structured strain sensor with excellent optical transparency based on highly purified, solution-processed, 99% metallic CNT-polydimethylsiloxane (PDMS) composite thin films. Our CNT-PDMS composite strain sensors are mechanically compliant, physically robust, and easily fabricated. The fabricated strain sensors exhibit a high optical transparency of over 92% in the visible range with acceptable sensing performances in terms of sensitivity, hysteresis, linearity, and drift. We also found that the sensitivity and linearity of the strain sensors can be controlled by the number of CNT sprays; hence, our sensor can be applied and controlled based on the need of individual applications. Finally, we investigated the detections of human activities and emotions by mounting our transparent strain sensor on various spots of human skins.