Swaroop Kaza
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Publication
Featured researches published by Swaroop Kaza.
Applied Physics Letters | 2007
An Chen; Sameer Haddad; Yi-Ching Wu; Zhida Lan; Tzu-Ning Fang; Swaroop Kaza
The Cu2O metal-insulator-metal (MIM) resistive switching memory was characterized on a 64kb memory test array. The switching properties are consistent with the proposed switching model of conductivity modulation by a charge trapping process. Retention, programing characteristics, and temperature effects are analyzed based on the switching model. The measured characteristics and the switching model for Cu2O MIM are compared with those of other resistive switching materials. The statistical characteristics provide essential evidence for analysis of the switching mechanism and evaluation of the memory devices.
Applied Physics Letters | 2008
An Chen; Sameer Haddad; Yi-Ching Wu; Tzu-Ning Fang; Swaroop Kaza; Zhida Lan
The erasing characteristics of Cu2O metal-insulator-metal resistive switching memory were measured on a 64Kb memory test array. The erasing yield reaches the maximum at an optimal erasing voltage. Effective erasing requires a threshold current compliance that is higher for shorter pulse width. The erasing current and erasing power both depend strongly on the on-state before erasing, while the erasing voltage is essentially unaffected. Erasing appears to be a power-driven process, which may be related to the thermal effect of power dissipation. The experimental data and analysis suggest that erasing can be explained by field-assisted thermal emission of trapped charges.
international electron devices meeting | 2006
Tzu-Ning Fang; Swaroop Kaza; Sameer Haddad; An Chen; Yi-Ching Wu; Zhida Lan; Steven Avanzino; Dongxiang Liao; Chakku Gopalan; Seungmoo Choi; Sara Mahdavi; Matthew Buynoski; Yvonne Lin; Christie Marrian; Colin S. Bill; Michael A. Vanbuskirk; Masao Taguchi
A metal-insulator-metal (MIM) device based on a Cu2O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu2O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior of the device during erase with Ni and Ti top electrodes suggests different mechanisms. This paper focuses on Cu/Cu2O/Ni devices and proposes a thermal erase model, based on power calculations and temperature dependence
Archive | 2006
Colin S. Bill; Swaroop Kaza; Wei Daisy Cai; Tzu-Ning Fang; David Gaun; Eugen Gershon; Michael A. Van Buskirk; Jean Wu
Archive | 2005
David Gaun; Colin S. Bill; Swaroop Kaza
Archive | 2004
Colin S. Bill; Swaroop Kaza; Tzu-Ning Fang; Stuart Spitzer
Archive | 2006
Swaroop Kaza; David Gaun; Michael A. Van Buskirk
Archive | 2005
David Gaun; Swaroop Kaza; Stuart Spitzer; Juri H. Krieger; Richard P. Kingsborough
Archive | 2006
Igor Sokolik; Richard P. Kingsborough; David Gaun; Swaroop Kaza; Stuart Spitzer; Suzette K. Pangrle
Archive | 2008
Wei Daisy Cai; Swaroop Kaza; Colin S. Bill; Michael A. Vanbuskirk
