Taisuke Kageura

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV−) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NV− centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV− centers near the surface compared with the states obtained for alternatively terminated surfaces.

Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond

We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range of

Role of carboxyl and amine termination on a boron-doped diamond solution gate field effect transistor (SGFET) for PH sensing

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

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Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

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Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

T, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as

Vertical 2DHG Diamond MOSFET with improvement the structure for high breakdown voltage and miniaturization

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NMR measurements using shallow NV centers in the nitrogen-terminated diamond

, follows a universal function of

Quality and Band Offset of the AlN thin films on Diamond (111) Deposited by RF-N-plasma-assisted MBE

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Optimized post-deposition annealing for improved bias stability of atomic-layer-deposited Al2O3 films

. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.