Takashi Agatsuma

An analysis of equivalent circuit with gate protection in MOS devices

The dependence of the resistance associated with the equivalent circuit with gate protection on the electrical breakdown voltage was analyzed in terms of the transient solution of the equivalent circuit. The series resistance for the input voltage and the dynamic resistance in the breakdown region of the protective diode are found to have pronounced effects on the electrical breakdown voltage of the gate oxide, while the distributed resistance has a lesser effect on it.

A characterization technique for second breakdown in Ge alloyed junction transistors

A characterization technique for second breakdown in Ge p-n-p alloyed junction transistors with the open base condition is described. This method is based on the saturated characteristics which are expressed in the form of exponential dependence on the slope of the rising part of the applied voltage. Using this method, a comparison is made of transistor SB characteristics in terms of device characteristics, such as BV CEO and H FE .