Teng Yuan
Chinese Academy of Sciences
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Publication
Featured researches published by Teng Yuan.
Journal of Semiconductors | 2015
Tian Xiaoli; Lu Jiang; Teng Yuan; Zhang Wenliang; Lu Shuojin; Zhu Yangjun
The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.
Archive | 2016
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli
Archive | 2017
Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli; Gao Junyu