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Dive into the research topics where Teng Yuan is active.

Publication


Featured researches published by Teng Yuan.


Journal of Semiconductors | 2015

Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

Tian Xiaoli; Lu Jiang; Teng Yuan; Zhang Wenliang; Lu Shuojin; Zhu Yangjun

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N+ buffer layer, the other is decreasing the implant dose of the P+ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.


Archive | 2016

IGBT and manufacturing method thereof

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Reverse conducting-insulated gate bipolar transistor and fabrication method

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Crimping-type IGBT device

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Reverse blocking IGBT (Insulated Gate Bipolar Transistor) chip and manufacturing method thereof

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Insulated gate bipolar transistor and fabrication method thereof

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Production method of RB-IGBT chip and RB-IGBT chip

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Reverse conducting insulated gate bipolar transistor (RC-IGBT) and manufacturing method thereof

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli


Archive | 2017

Measurement method and measurement system for breakdown voltage of PN junction at back of IGBT (Insulated Gate Bipolar Transistor) chip

Teng Yuan; Zhu Yangjun; Lu Shuojin; Tian Xiaoli; Gao Junyu

Collaboration


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Zhu Yangjun

Chinese Academy of Sciences

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Lu Shuojin

Chinese Academy of Sciences

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Tian Xiaoli

Chinese Academy of Sciences

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Zhang Wenliang

Chinese Academy of Sciences

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Han Zhengsheng

Chinese Academy of Sciences

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Lu Jiang

Chinese Academy of Sciences

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Tan Ji

Chinese Academy of Sciences

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Ye Tianchun

Chinese Academy of Sciences

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