Tetsuo Iijima
Hitachi
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Publication
Featured researches published by Tetsuo Iijima.
international electron devices meeting | 1983
Isao Yoshida; Takeaki Okabe; Tetsuo Iijima; Shigeo Ohtaka; Minoru Nagata
A high-power MOSFET has been developed which has a breakdown voltage as high as 1600V, a 5A current capability and a switching time as fast as 20ns. This device has a field limiting ring structure for junction termination, and this structure was optimized by a sophisticated two-dimensional numerical analysis. To increase current capabilities, an optimized cell structure was designed based on experimental data. Furthermore, an ultra-high switching speed was obtained, through reducing the input capacitance of the new gate structure to half that for a conventional one.
Archive | 1994
Kozo Sakamoto; Isao Yoshida; Shigeo Otaka; Tetsuo Iijima; Harutora Shono; Ken Uchid; Masayoshi Kobayashi; Hideki Tsunoda
Archive | 1987
Isao Yoshida; Takeaki Okabe; Mitsuo Ito; Kazutoshi Ashikawa; Tetsuo Iijima
Archive | 1984
Tetsuo Iijima; Takeaki Okabe; Shigeo Otaka; Isao Yoshida
Archive | 1994
Minoru Suda; Masatoshi Nakasu; Tetsuo Iijima
Archive | 1990
Shigeo Ohtaka; Akio Andoo; Tetsuo Iijima
Archive | 1993
Minoru Suda; Masatoshi Nakasu; Tetsuo Iijima
Archive | 1985
Isao Yoshida; Takeaki Okabe; Mitsuo Ito; Kazutoshi Ashikawa; Tetsuo Iijima
Archive | 1995
Tetsuo Iijima; Akira Kanai; Masayoshi Kobayashi; Satoshi Meguro; Hiroji Saida; Eiji Yanokura; 正義 小林; 広二 斉田; 怜 目黒; 栄二 矢ノ倉; 明 金井; 哲郎 飯島
international telecommunications energy conference | 1983
Takeaki Okabe; Mineo Katsueda; Isao Yoshida; Tetsuo Iijima; Shigeo Ohtaka
