Shigeo Ohtaka

A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications

An intelligent power MOSFET with built-in reverse battery protection, which is important for automotive power switches, has been developed. The protection is accomplished by integrating an additional power MOSFET in series with a power MOSFET and the control circuit of the additional power MOSFET. The reverse battery protection is achieved without using external control signals. The positive drain breakdown voltage for the proposed MOSFET is 71 V and the negative drain current at a drain voltage of -16 V is only -750 /spl mu/A. The on-state resistance is 170 m/spl Omega/. This new intelligent power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications.

1600V Power MOSFET with 20ns switching-speed

A high-power MOSFET has been developed which has a breakdown voltage as high as 1600V, a 5A current capability and a switching time as fast as 20ns. This device has a field limiting ring structure for junction termination, and this structure was optimized by a sophisticated two-dimensional numerical analysis. To increase current capabilities, an optimized cell structure was designed based on experimental data. Furthermore, an ultra-high switching speed was obtained, through reducing the input capacitance of the new gate structure to half that for a conventional one.