Thor Ansbæk
Technical University of Denmark
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Thor Ansbæk.
IEEE Photonics Technology Letters | 2013
Thor Ansbæk; Il-Sug Chung; E. S. Semenova; Kresten Yvind
We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing the reflection at the semiconductor-air interface using an anti-reflective coating (ARC). We demonstrate how the ARC can be integrated in a monolithic structure by oxidizing AlGaAs with high Al-content. The HCG VCSEL has the potential to achieve polarization stable single-mode output with high tuning efficiency. The HCG VCSEL shows a total tuning range of 16 nm around an emission wavelength of 1060 nm with 1-mW output power.
IEEE Journal of Selected Topics in Quantum Electronics | 2013
Thor Ansbæk; Il-Sug Chung; E. S. Semenova; Ole Hansen; Kresten Yvind
We demonstrate how resonant excitation of a microelectromechanical system can be used to increase the tuning range of a vertical-cavity surface-emitting laser twofold by enabling both blue- and red-shifting of the wavelength. In this way, a short-cavity design enabling wide tuning range can be realized. A high-index-contrast subwavelength grating vertical-cavity surface-emitting laser with a monolithically integrated antireflection coating is presented. By incorporating an antireflection coating into the air cavity, higher tuning efficiency can be achieved at low threshold current. The first result shows 24-nm continuous resonant tuning range around an emission wavelength of 1060 nm with 0.9 mW output power.
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2013
Thor Ansbæk; Elizaveta Semenova; Kresten Yvind; Ole Hansen
The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward GaAs larger than 500 is achieved. This selectivity enables fabrication control of the nanometer-size structures required in photonic crystal and high-index contrast subwavelength grating structures. The crystallographic dependence of the lateral etch rate in InAlP is shown to be symmetric around the 〈110〉 directions where an etch rate of 0.5 μm/min is obtained at 22 °C in HCl:2H2O. Since the etch rate in the 〈100〉 directions exceeds by ten times that of the 〈110〉 directions, InAlP may be used in sacrificial release of high-aspect ratio structures. Free-hanging structures with length to air-gap aspect ratios above 600 are demonstrated by use of critical point drying following the sacrificial etch.
Proceedings of SPIE, the International Society for Optical Engineering | 2010
Thor Ansbæk; Claus Højgaard Nielsen; Niels Bent Larsen; Søren Dohn; Anja Boisen; Il-Sug Chung; David Larsson; Kresten Yvind
We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain through modulation of the VCSEL output power as the polymer swell. We have investigated the responsivity of this technique experimentally using a plasma polymerized polystyrene coating and explain the results theoretically as a reflectance modulation of the top DBR.
Proceedings of SPIE | 2016
Hitesh Kumar Sahoo; Thor Ansbæk; Luisa Ottaviano; Elizaveta Semenova; Ole Hansen; Kresten Yvind
The paper presents the design and fabrication of an optically pumped 1550nm tunable MEMS VCSEL with an enclosed MEMS. The MEMS is defined in SOI and the active material, an InP wafer with quantum wells are bonded to the SOI and the last mirror is made from the deposition of dielectric materials. The design brings in flexibility to fabricate MEMS VCSELs over a wider range of wavelengths. The paper discusses results from the simulations and bonding results from fabrication. The device will push the boundaries for wavelength sweep speed and bandwidth.
Applied Physics Letters | 2012
Thor Ansbæk; Claus Højgård Nielsen; Søren Dohn; David Larsson; Il-Sug Chung; Kresten Yvind
Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic compounds. We model the physics as a change in the top mirror loss caused by swelling of the polymer upon absorbing the target volatile organic compound. Further we show how acetone vapors at 82 000 ppm concentration can change the polymer coated VCSEL output power by 20 μW.
Vertical-Cavity Surface-Emitting Lasers XXII | 2018
Elizaveta Semenova; Hitesh Kumar Sahoo; Thor Ansbæk; Luisa Ottaviano; Ole Hansen; Kresten Yvind
MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.
Sensors and Actuators A-physical | 2010
Giulio Fragiacomo; Thor Ansbæk; Thomas Pedersen; Ole Hansen; Erik Vilain Thomsen
Microelectronic Engineering | 2009
Thor Ansbæk; Dirch Hjorth Petersen; Ole Hansen; Jakob B. Larsen; Torben Mikael Hansen; Peter Bøggild
Archive | 2013
Kresten Yvind; Thor Ansbæk; Il-Sug Chung; Ole Hansen