Tomohiro Iijima

High-Accuracy Proximity Effect Correction for Mask Writing

A high-accuracy proximity effect correction method for high-precision masks has been developed to satisfy current and future requirements. In this paper, we explain the primary features of this method and the theories on which it is based. The developed formula for obtaining the optimum correction dose is expressed in the form of either iterations or an infinite series of functions. The advantage of this formula is that it quickly converges to the sought value, bringing about high-accuracy proximity effect correction with a high calculation speed. A coarse graining method (covering pattern density and representative figure methods) for reducing calculation time is explained. This method has been adopted for an EX-11 series and has been used for mask writing from the 180 nm design rule onward.

Global Critical Dimension Correction: I. Fogging Effect Correction

Present LSI technology requires very strict critical dimension (CD) control on masks. An electron beam (EB) mask writer has been widely used but is known to induce a fogging effect that affects CD control. In this paper, a new formula for calculating the optimum dose required to correct both the fogging effect and the proximity effect is proposed. This formula is expressed as the product of the proximity effect and fogging effect correction terms. Features of this new formula are that (1) the fogging effect correction term includes the result of the proximity effect correction, and (2) the formula can provide an accurate value for the optimum dose required to correct both the proximity and fogging effects. Correction accuracy is evaluated under the conditions that the proximity effect parameter η and the fogging effect parameter θ are 0.8 and 0.1, respectively. It is found that when using a conventional fogging effect correction method, a significant correction error (1.7% in energy and 3.4 nm in dimension) appears because the method does not use the results of the proximity effect correction. On the other hand, our method can suppress the correction error to less than 0.15% in energy (0.29 nm in dimension).

Shear Wave Wavefront Mapping Using Ultrasound Color Flow Imaging

A wavefront reconstruction method for a continuous shear wave is proposed. The method uses ultrasound color flow imaging (CFI) to detect the shear wave’s wavefront. When the shear wave vibration frequency satisfies the required frequency condition and the displacement amplitude satisfies the displacement amplitude condition, zero and maximum flow velocities appear at the shear wave vibration phases of zero and π rad, respectively. These specific flow velocities produce the shear wave’s wavefront map in CFI. An important feature of this method is that the shear wave propagation is observed in real time without addition of extra functions to the ultrasound imaging system. The experiments are performed using a 6.5 MHz CFI system. The shear wave is excited by a multilayer piezoelectric actuator. In a phantom experiment, the shear wave velocities estimated using the proposed method and those estimated using a system based on displacement measurement show good agreement.

EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond

EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm2) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.

Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method

A new formula for proximity effect correction is discussed. The formula is represented by a series expansion. When infinite terms are used, the formula gives accurate optimum correction doses. The correction accuracy of the new formula is evaluated for the worst case scenario and compared with the conventional formula. It is shown that (1) the new formula suppresses correction errors to less than 0.5% for the deposited energy and (2) dimensional errors are less than 4 nm, even if only the first 3 terms are calculated for critical patterns. By using the new formula, the proximity effect correction can be carried out with sufficient accuracy, even for making reticles of 1 Gbit or higher-capacity DRAMs.

Shear wave mapping of skeletal muscle using shear wave wavefront reconstruction based on ultrasound color flow imaging

We have proposed a quantitative shear wave imaging technique for continuous shear wave excitation. Shear wave wavefront is observed directly by color flow imaging using a general-purpose ultrasonic imaging system. In this study, the proposed method is applied to experiments in vivo, and shear wave maps, namely, the shear wave phase map, which shows the shear wave propagation inside the medium, and the shear wave velocity map, are observed for the skeletal muscle in the shoulder. To excite the shear wave inside the skeletal muscle of the shoulder, a hybrid ultrasonic wave transducer, which combines a small vibrator with an ultrasonic wave probe, is adopted. The shear wave velocity of supraspinatus muscle, which is measured by the proposed method, is 4.11 ± 0.06 m/s (N = 4). This value is consistent with those obtained by the acoustic radiation force impulse method.

Characterization of nonlinearity of shear elasticity using local velocity mapping

The emerging technology of ultrasonic imaging of the soft tissue strain and elasticity, which aims at providing information about the mechanical properties of the tissues, has become a peer research issue since the 1990s. An elasticity imaging method using continuous shear wave excitation (CSWE) is expected to be a safe and quantitative technique. We have already proposed a local velocity mapping method for shear elasticity by reconstructing the small phase modulation components of the harmonic distortion in CSWE. In this paper, we propose a simple model of static hysteresis as the nonlinearity of shear elasticity. This model is based on the presence of harmonic phase modulation components in shear wave propagation. By using this model, we attempt to characterize the static hysteresis of shear elasticity. The relationship between the texture patterns of the local velocity map and the nonlinearity of the medium, which is measured by a rheometer, shows that the proposed model can be adopted for the imaging of the nonlinearity of shear elasticity.

High-accuracy correction of critical dimension errors taking sequence of large-scale integrated circuits fabrication processes into account

We previously proposed a new method to correct critical dimension (CD) errors appearing in large-scale integrated circuit (LSI) fabrication processes, such as long range loading effect, local flare, and micro loading effect. The method provides high accuracy correction dimensions when using the pattern modulation method (method correcting CD errors by controlling figure sizes of LSI patterns). Now the case that several processes cause CD errors when a layer of an LSI pattern is fabricated on a wafer is discussed. These CD errors are corrected by generalizing the method proposed previously and taking the sequence of processes into account. It is shown from numerical calculation that the method can suppress the CD error to less than 0.01 nm with three iterations, under the condition that the maximum CD errors by micro loading effect and flare are 10 nm and 20 nm, respectively. It is strongly suggested that our methods will provide the necessary CD accuracies in the future.

Electron-beam mask writer EBM-6000 for 45 nm HP node

In order to comply with the demanding technology requirements for 45 nm half pitch (HP) node (32 nm technology node), Nuflare Technology Inc. (NFT) has developed Electron-beam mask writing equipment, EBM-6000, with increased current density (70A/cm2), while its other primary features basically remain unchanged, namely 50 kV acceleration voltage, Variable Shaped Beam (VSB)/vector scan, like its predecessors [1-5]. In addition, new functionalities and capabilities such as astigmatism correction in subfield, optimized variable stage speed control, electron gun with multiple cathodes (Turret electron gun), and optimized data handling system have been employed to improve writing accuracy, throughput, and up-time. VSB-12 is the standard input data format for EBM-6000, and as optional features to be selected by users, direct input function for VSB-11 and CREF-flatpoly are offered as well. In this paper, the new features and capabilities of EBM-6000 together with supporting technologies are reported to solidly prove the viability of EBM-6000 for 45 nm HP node.

High-Speed Convolution System For Real-Time Proximity Effect Correction

In order to realize a real-time proximity effect correction system, a high-speed, highly accurate hardware system for convolution calculation has been developed. The representative figure method is used in the system. Pipeline architecture and parallel processing architecture are also used. The calculation speed of the system is 500 s for a writing region of 10 ×10 cm. The optimum correction dose has been evaluated using the output data of the convolution system. The error in the correction dose caused by our system is found to be 0.5% at most. These results suggest that a real-time proximity effect correction system can be realized, which can be used for making reticles of Gbit-class dynamic ramdom access memories (DRAMs).