Toru Miwa
SanDisk
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Publication
Featured researches published by Toru Miwa.
international solid-state circuits conference | 2008
Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Adrian Cernea; Binh Le; Eiichi Makino; Takashi Taira; Hiroyuki Otake; Norifumi Kajimura; Susumu Fujimura; Yoshiaki Takeuchi; Mikihiko Itoh; Masanobu Shirakawa; Dai Nakamura; Yuya Suzuki; Yuki Okukawa; Masatsugu Kojima; Kazuhide Yoneya; Takamichi Arizono; Toshiki Hisada; Shinji Miyamoto; Mitsuhiro Noguchi; Toshitake Yaegashi
NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS technology. In 43 nm generation, gate-induced drain leakage (GIDL) influences the electrical field on both sides of NAND strings. GIDL causes severe program disturb problems to NAND flash memories. To avoid GIDL, two dummy wordlines (WL) on both sides of NAND strings are added. This is effective because the dummy gate voltages, are selected independent of the program inhibit voltage.
international solid-state circuits conference | 2011
Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Takeshi Ogawa; Makoto Iwai; Osamu Nagao; Junji Musha; Takatoshi Minamoto; Kosuke Yanagidaira; Yuya Suzuki; Dai Nakamura; Yoshikazu Hosomura; Yuka Furuta; Mai Muramoto; Rieko Tanaka; Go Shikata; Ayako Yuminaka; Kiyofumi Sakurai; Manabu Sakai; Hong Ding; Mitsuyuki Watanabe; Yosuke Kato
NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets, such as solid-state drives (SSDs) and data-storage servers, require lower bit cost, higher program and read throughputs, and lower power consumption
Archive | 2008
Toru Miwa; Gerrit Jan Hemink
Archive | 2007
Yan Li; Yupin Kawing Fong; Toru Miwa
Archive | 2010
Idan Alrod; Eran Sharon; Toru Miwa; Gerrit Jan Hemink; Nima Mokhlesi
Archive | 2014
Manabu Sakai; Toru Miwa
Archive | 2010
Idan Alrod; Eran Sharon; Toru Miwa; Gerrit Jan Hemink; Yee Lih Koh
Archive | 2006
Yan Li; Fanglin Zhang; Toru Miwa; Farookh Moogat
Archive | 2006
Yan Li; Fanglin Zhang; Toru Miwa; Farookh Moogat
Archive | 2014
Yingda Dong; Cynthia Hsu; Man L. Mui; Manabu Sakai; Toru Miwa; Masaaki Higashitani
