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Dive into the research topics where Toru Nasu is active.

Publication


Featured researches published by Toru Nasu.


international electron devices meeting | 1997

Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)

Eiji Fujii; T. Otsuki; Yuji Judai; Yasuhiro Shimada; Masamichi Azuma; Yasuhiro Uemoto; Yoshihisa Nagano; Toru Nasu; Y. Izutsu; Akihiro Matsuda; K. Nakao; Keisuke Tanaka; K. Hirano; Takeshi Ito; T. Mikawa; T. Kutsunai; L. D. McMillan; C.A. Paz de Araujo

A highly-reliable ferroelectric memory (FeRAM) which ensures retention of data written at a low voltage of 2.5 V and humidity resistance for 10 years under a high temperature of 70/spl deg/C has been successfully developed for the first time. These excellent characteristics have been attained by a newly developed ferroelectric material with mixed superlattice crystal of Y-1 family and a integration technology which makes the use of pl-SiN passivation possible.


Archive | 1998

Semiconductor device having a capacitor exhibiting improved moisture resistance

Koji Arita; Eiji Fujii; Yasuhiro Shimada; Yasuhiro Uemoto; Toru Nasu; Akihiro Matsuda; Yoshihisa Nagano; Atsuo Inoue; Taketoshi Matsuura; T. Otsuki


Archive | 2000

Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same

Toru Nasu; Koji Arita


Archive | 1998

Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer

Koji Arita; Eiji Fujii; Yasuhiro Shimada; Yasuhiro Uemoto; Toru Nasu; Akihiro Matsuda; Yoshihisa Nagano; Atsuo Inoue; Taketoshi Matsuura; T. Otsuki


Archive | 2009

Capacitor insulating film, method for fabricating the same, capacitor element, method for fabricating the same, semiconductor memory device, and method for fabricating the same

Shinichiro Hayashi; Toru Nasu


Archive | 1995

Integrated circuit capacitors with barrier layer and process for making the same

Masamichi Azuma; Eiji Fujii; Yasuhiro Uemoto; Shinichiro Hayashi; Toru Nasu; Yoshihiro Shimada; Akihiro Matsuda; T. Otsuki; Michael C. Scott; Joseph D. Cuchiaro; Carlos A. Paz de Araujo


Archive | 2001

Method for fabricating semiconductor memory device having a capacitor

Yoshihisa Nagano; Toru Nasu; Hajime Yasuoka; Eiji Fujii


Archive | 1998

Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof

Koji Arita; Eiji Fujii; Yasuhiro Shimada; Yasuhiro Uemoto; Toru Nasu; Akihiro Matsuda; Yoshihisa Nagano; Atsuo Inoue; Taketoshi Matsuura; T. Otsuki


Archive | 1996

Method of manufacturing capacitor included in semiconductor device

Akihiro Matsuda; Koji Arita; Yoshihisa Nagano; Yasuhiro Uemoto; Toru Nasu


Archive | 2002

Ferroelectric film and semiconductor device

Keisuke Tanaka; Toru Nasu; Masamichi Azuma

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