Tsukasa Shirotori

A current-controlled latch sense amplifier and a static power-saving input buffer for low-power architecture

Two new power-saving schemes for high-performance VLSIs with a large-scale memory and many interface signals are described. One is a current-controlled latch sense amplifier that reduces the power dissipation by stopping sense current automatically. This sense amplifier reduces power without degrading access time compared with the conventional current-mirror sense amplifier. The other is a static power-saving input buffer (SPSIB) that reduces DC current in interface circuits receiving TTL high input level. The effectiveness of these new circuits is demonstrated with a 512-kb high-speed SRAM. >

A 9-ns HIT-delay 32-kbyte cache macro for high-speed RISC

A 32-kB cache macro with an experimental reduced instruction set computer (RISC) is realized. A pipelined cache access to realize a cycle time shorter than the cache access time is proposed. A double-word-line architecture combines single-port cells, dual-port cells, and CAM cells into a memory array to improve silicon area efficiency. The cache macro exhibits 9-ns typical clock-to-HIT delay as a result of several circuit techniques, such as a section word-line selector, a dual transfer gate, and 1.0- mu m CMOS technology. It supports multitask operation with logical addressing by a selective clear circuit. The RISC includes a double-word load/store instruction using a 64-b bus to fully utilize the on-chip cache macro. A test scheme allows measurement of the internal signal delay. The test device design is based on the unified design rules scalable through multigenerations of process technologies down to 0.8 mu m. >

A current-mode latch sense amplifier and a static power saving input buffer for low-power architecture

Two circuit schemes for reducing power dissipation are proposed. The first is a current-mode latch sense amplifier that achieves power reduction without degradation of the access speed compared with conventional current-mirror sense amplifier operation. The other is a static power saving input buffer (SPSIB) for reducing static power. These circuits are applied to 512-kb high-speed SRAMs, and the efficiencies are simulated by SPICE simulations. The current-mode latch sense amplifier effectively reduces the power, and the SPSIB reduces current in the interface circuit.<<ETX>>

A 32 kbyte integrated cache memory

The system, circuit, layout and device levels of an integrated cache memory (ICM), which includes 32 kbyte DATA memory with typical address to HIT delay of 18 ns and address to DATA delay of 23 ns, are described. The ICM offers the largest memory size and the fastest speed ever reported in a cache memory. The device integrates a 32 kbyte DATA INSTRUCTION memory, a 34 kbit TAG memory, an 8 kbit VALID flat, a 2 kbit least recently used (LRU) flag, comparators, and CPU interface logic circuits on a chip. The inclusion of the DATA memory is crucial in improving system cycle time. The device uses several novel circuit design technologies, including a double-word-line scheme, low-noise flush clear, a low-power comparator, noise immunity, and directly testable memory design. Its newly proposed way-slice architecture increases both flexibility and expandability. >

A 30- mu A data-retention pseudostatic RAM with virtually static RAM mode

A 1-Mb (128K*8) pseudostatic RAM (PSRAM) is described. A novel feature of the RAM is the inclusion of a virtually static RAM (VSRAM) mode, while being fully compatible with a standard PSRAM. The RAM changes into the VSRAM mode when the RFSH pin is grounded, even in active cycles. The RAM can be used either as a fast PSRAM of 36-ns access time or as a convenient VSRAM of 66-ns access time. The typical operation current and data-retention current are 30 mA at 160-ns cycle time and 30 mu A, respectively. In order to achieve high-speed operation, low data-retention current, and high reliability, the RAM uses delay-time tunable design, a current-mirror timer, hot-carrier resistant circuits, and an optimized arbiter. These technologies are applicable to general advanced VLSIs. >

A 0.5-W 64-kilobyte snoopy cache memory with pseudo two-port operation

A 64-kbyte snoopy cache memory was developed. The modified double word-line architecture with word-line buffers resulted in a large-size memory and a time-multiplex snoop operation by the pseudo-two-port method with a single-port cell. The flexible expandability was achieved by cascading multiple cache memories. The device was successfully implemented with 1.0- mu m double-polysilicon and double-metal CMOS technology. Low-power sense amplifiers and comparators limited power dissipation to 0.5 W at 40 MHz. >

A 110-MHz/1-Mb synchronous TagRAM

A 4-way set associative TagRAM with 1.189-Mb capacity has been developed which can handle a secondary cache system of up to 16 Mbytes. A 9-ns cycle operation and clock to D/sub out/ of 4.7 ns are achieved by use of circuit techniques such as a pipelined decoding scheme, a single PMOS load BiCMOS main decoder, a BiCMOS sense-amplifying comparator, doubly placed self-timed write circuits, and highly linear VCO for a PLL. The device is successfully implemented with 0.7-/spl mu/m double polysilicon double-metal BiCMOS technology. >