Tsuneo Tsukahara

Macromodels in the frequency domain analysis of microwave resonators

This paper describes a 1-V operation Bluetooth RF transceiver in 0.2-/spl mu/m CMOS SOI. The transceiver integrates a radio-frequency transmit/receive switch, an image-reject mixer, a quadrature demodulator, g/sub m/-C filters, an LC-tank voltage-controlled oscillator, a phase-locked loop synthesizer, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to track the carrier-frequency drift allowed in the Bluetooth specification. The g/sub m/ cell in the filters uses depletion-mode pMOS transistors. In order to achieve 1-V operation, LC-tuned-folded and transistor-current-source-folded circuits are used in the RF and IF building blocks, respectively. In order to minimize power consumption, the current flowing through the circuit is optimally shared between the folded stages. A tuning circuit for the g/sub m/-C filters and a bias generation circuit ensure stable transceiver performance. The transceiver shows -77-dBm sensitivity at 0.1% bit error rate and consumes 33 and 53 mW from 1 V in the transmit and receive modes, respectively.

A batteryless wireless system with MTCMOS/SOI circuit technology

Ultralow-power multi-threshold (MT) CMOS/SOI circuit technology, which makes it possible to lower the supply voltage of the LSIs to 0.5 V and reduce the power dissipation of 1-mW level, provides self-powered batteryless operation for short-range wireless systems. We overview MTCMOS/SOI circuit technology and describe some batteryless wireless systems built using MTCMOS/SOI LSIs.