Tsuyoshi Ishikawa | Researchain

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Featured researches published by Tsuyoshi Ishikawa.

Archive | 2013

Silicon carbide semiconductor device and manufacturing method of the same

Tomohiro Mimura; Shinichiro Miyahara; Hidefumi Takaya; Masahiro Sugimoto; Narumasa Soejima; Tsuyoshi Ishikawa; Yukihiko Watanabe

Archive | 2016

Halbleitereinrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung

Hidefumi Takaya; Hideo Matsuki; Naohiro Suzuki; Tsuyoshi Ishikawa

Archive | 2011

SiC semiconductor device having Schottky barrier diode and method for manufacturing the same

Takeo Yamamoto; Takeshi Endo; Jun Morimoto; Hirokazu Fujiwara; Yukihiko Watanabe; Takashi Katsuno; Tsuyoshi Ishikawa

Archive | 2011

Manufacturing method of silicon carbide single crystal

Hiroki Watanabe; Yasuo Kitou; Yasushi Furukawa; Kensaku Yamamoto; Hidefumi Takaya; Masahiro Sugimoto; Yukihiko Watanabe; Narumasa Soejima; Tsuyoshi Ishikawa

Archive | 2012

Verfahren zur Fertigung einer Siliciumcarbid-Halbleitervorrichtung

Endo, Takeshi, Aichi-pref.; Shinichiro Miyahara; Morino, Tomoo, Aichi-pref.; Konishi, Masaki, Aichi-pref.; Hirokazu Fujiwara; Jun Morimoto; Tsuyoshi Ishikawa; Takashi Katsuno; Yukihiko Watanabe

Archive | 2014

Siliciumcarbid-Halbleitervorrichtung und Verfahren zu deren Fertigung

Hidefumi Takaya; Masahiro Sugimoto; Narumasa Soejima; Yukihiko Watanabe; Noborio, Masato, Aichi-pref.; Yamamoto, Kensaku, Aichi-pref.; Matsuki, Hideo, Aichi-pref.; Tsuyoshi Ishikawa

Archive | 2014

Siliziumcarbid-Halbleitervorrichtung und Verfahren zu deren Fertigung

Yukihiko Watanabe; Yamamoto, Kensaku, Aichi-pref.; Noborio, Masato, Aichi-pref.; Hidefumi Takaya; Masahiro Sugimoto; Narumasa Soejima; Tsuyoshi Ishikawa; Matsuki, Hideo, Aichi-pref.

Archive | 2012

Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same

Hidefumi Takaya; Hideo Matsuki; Naohiro Suzuki; Tsuyoshi Ishikawa; Narumasa Soejima; Yukihiko Watanabe

Archive | 2011

Halbleitervorrichtung und Herstellungsverfahren hierfür

Toshimasa Yamamoto; Masahiro Sugimoto; Hidefumi Takaya; Jun Morimoto; Narumasa Soejima; Tsuyoshi Ishikawa; Yukihiko Watanabe

Archive | 2011

HALBLEITERVORRICHTUNG, DIE EINEN ZELLBEREICH UND EINEN RANDBEREICH BEINHALTET UND EINE STRUKTUR FÜR HOHE DURCHBRUCHSPANNUNG AUFWEIST

Tsuyoshi Ishikawa; Jun Morimoto; Narumasa; o K.K. Toyota Chuo Kenky Soejima; Masahiro Sugimoto; Naohiro Suzuki; Hidefumi Takaya; Yukihiko Watanabe; Kensaku Yamamoto

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