Tzung-Han Wu

GaInP/GaAs HBT Sub-Harmonic Gilbert Mixers Using Stacked-LO and Leveled-LO Topologies

This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mum GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation

Compact 5.2-GHz GaInP/GaAs HBT Gilbert upconverter using lumped rat-race hybrid and current combiner

A compact 5.2-GHz Gibert upconversion mixer is demonstrated using the 2-/spl mu/m GaInP/GaAs heterojunction bipolar transistor (HBT) technology. A miniature lumped-element rat-race hybrid and an LC current combiner are used in the LO port and the RF port of the upconversion Gilbert mixer, respectively. The effect of the LC current combiner with inductor loss is established in this letter. An active IF balun is incorporated in the Gilbert upconverter with no extra power consumption. The fully integrated Gilbert upconverter has conversion gain of 1 dB, OP/sub 1 dB/ of -10 dBm, and OIP/sub 3/ of 2dBm when input IF=300 MHz, LO=4.9 GHz, and output RF=5.2 GHz.

10-GHz Highly Symmetrical Sub-Harmonic Gilbert Mixer Using GaInP/GaAs HBT Technology

A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm

A 5.2 GHz 16 dB gain CMFB Gilbert downconversion mixer using 0.35 /spl mu/m deep trench isolation SiGe BiCMOS technology

A 16 dB conversion gain, IP/sub 1dB/=-21 dBm and IIP/sub 3/=-11 dBm Gilbert downconversion micromixer when RF=5.2 GHz and LO=5.17 GHz is demonstrated by using 0.35 /spl mu/m SiGe BiCMOS technology. The input return loss is better than 13 dB for frequencies up to 10 GHz. Active PMOS loads with common mode feedback to stabilize the bias points is used in the Gilbert mixer loads to increase the mixer gain. An IF NMOS differential amplifier converts the differential output into a single-ended output. SiGe HBTs possesses good device matches and the SiGe BiCMOS technology has deep trench isolation technique to improve the port to port isolation. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement. -66 dB LO-IF, -52 dB LO-RF and -24 dB RF-IF isolations for a downconversion micromixer are achieved.

Analysis and Design of the 0.13-

This paper demonstrates the design methodology of the shunt-series series-shunt dual-feedback Meyer wideband amplifier. The small-signal S-parameters are obtained for the first time using the pole-and-zero analysis, thus giving the RF designers a detailed insight into the Meyer amplifier. A 10-GHz wideband amplifier is demonstrated in this paper, using 0.13-mum CMOS technology to verify our design theory. The experimental results of the S-parameters highly agree with our theory.

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A GalnP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.

CMOS Shunt–Series Series–Shunt Dual-Feedback Amplifier

A 5.2 GHz 1 dB conversion gain, IP1 dB = -19 dBm and IIP3 = -9 dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 μm SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for the image rejection. Polyphase filters are also used to generate LO and RF quadrature signals around 5 GHz in the double quadrature downconverter.

Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology

A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (heterojunction bipolar transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP1dB is -18 dBm, IIP2 is 13 dBm and the IIP3 is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz

A 5.2 GHz 47 dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35 μm SiGe HBT Technology

A 5.2 GHz upconversion Gilbert mixer with single-ended intermediate frequency (IF), local oscillator (LO), and RF ports is demonstrated using 0.35 µm SiGe heterojunction bipolar transistor (HBT) technology. The upconverter has a single-ended IF port. In addition, a lumped-element rat-race hybrid is inserted in the LO input stage to maintain balanced LO signals. The physics of the lumped-element rat-race is discussed in this paper. A passive LC current mirror is used to convert the mixers differential outputs into a single-ended output and double the output current. The design methodology of the LC current mirror and a new approach to improve the power gain with the output buffer are developed in this paper. The fully matched Gilbert upconverter has the conversion gain of -1 dB, OP1 dB of -10 dBm and OIP3 of 6 dBm when input IF=300 MHz, LO=4.9 GHz and output RF=5.2 GHz. The LO-IF isolation is -36 dB and the LO-RF isolation is -39 dB. The supply voltage is 3.3 V, the current consumption is 11.5 mA, and the die size is 0.98×0.83 mm2 with six integrated on-chip inductors.

A High 2LO-to-RF Isolation GaInP/GaAs HBT Sub-Harmonic Gilbert Mixer Using Three-Level Topology

A small and compact 5.2 GHz upconversion Gilbert micromixer using 0.35 μm SiGe HBT technology is demonstrated in this paper. The upconversion micromixer has a broadband matched single-ended IF input port. A lumped-elementrat-race hybrid is inserted in the LO input stage to maintain LO phase accuracy. A passive LC current combiner is used to convert the micromixer differential output into a single-ended output and double the output current. Thus, the IF port, LO port and RF port of the upconverter are single-ended, and the stand-along upconverter is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of-1 dB, OP 1 d B of -10 dBm, OIP 3 of 6 dBm when input IF=300 MHz, LO=4.9 GHz and output RF=5.2 GHz. The IF input return loss is better than 10 dB for frequencies up to 20 GHz while the RF output return loss is better than 13.5 dB for frequencies up to 20 GHz. The supply voltage is 3.3 V, the current consumption is 11.5 mA, and the die size is 0.98x0.83 mm 2 with 6 integrated on-chip inductors.