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Dive into the research topics where Unoh Kwon is active.

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Featured researches published by Unoh Kwon.


international electron devices meeting | 2015

Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility

Ruqiang Bao; Brian J. Greene; Unoh Kwon; Sungjae Lee; John Bruley; Weike Wang; Kai Zhao; Patrick W. DeHaven; Zhengwen Li; Keith Kwong Hon Wong; Stephan Grunow; Rama Divakaruni; Chung-hsun Lin; Siddarth Krishnan; Vijay Narayanan

In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W electrode. Our multiplicative model predicts that TiN fill offers the lower gate resistance than TiN/W fill for highly scaled gate lengths. By absorbing the results from our model into the real RMG FinFET devices, we observe that TiN fill provides ~6.4 % performance improvement compared to TiN/W fill. Meanwhile, the employment of gate conductance for gate stack film thickness monitoring is also described in our work.


Archive | 2017

ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNING FOR HIGH PERFORMANCE CMOS FinFETs

Ruqiang Bao; Siddarth A. Krishnan; Unoh Kwon; Keith Kwong Hon Wong


Archive | 2014

Metal stack for reduced gate resistance

Ruqiang Bao; Unoh Kwon; Rekha Rajaram; Keith Kwong Hon Wong


Archive | 2014

TRAPPING DISLOCATIONS IN HIGH-MOBILITY FINS BELOW ISOLATION LAYER

Michael P. Chudzik; Ramachandra Divakaruni; Judson R. Holt; Arvind Kumar; Unoh Kwon


Archive | 2016

Field effect transistors having multiple effective work functions

Takashi Ando; Min Dai; Balaji Kannan; Siddarth A. Krishnan; Unoh Kwon


Archive | 2013

Variable length multi-channel replacement metal gate including silicon hard mask

Michael P. Chudzik; Siddarth A. Krishnan; Unoh Kwon


Archive | 2016

METHODS FOR MAKING ROBUST REPLACEMENT METAL GATES AND MULTI-THRESHOLD DEVICES IN A SOFT MASK INTEGRATION SCHEME

Balaji Kannan; Rekha Rajaram; Unoh Kwon


Archive | 2014

Method and structure for transistors using gate stack dopants with minimal nitrogen penetration

Balaji Kannan; Unoh Kwon; Rekha Rajaram


ECS Transactions | 2014

(Keynote) Atomic Layer Deposition Trends and Challenges in High-k/Metal Gate and Alternative Channel CMOS Processing

Michael P Chudzik; Siddarth A. Krishnan; Min Dai; Shahab Siddiqui; Joseph F. Shepard; Unoh Kwon


Archive | 2017

INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

Ruqiang Bao; Unoh Kwon; Huihang Dong; John A. Fitzsimmons

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