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Dive into the research topics where V. Destefanis is active.

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Featured researches published by V. Destefanis.


Journal of Electronic Materials | 2014

Development of a Method for Chemical–Mechanical Preparation of the Surface of CdZnTe Substrates for HgCdTe-Based Infrared Focal-Plane Arrays

D. Pelenc; J. Merlin; Arnaud Etcheberry; P. Ballet; X. Baudry; D. Brellier; V. Destefanis; A. Ferron; Paul Fougères; D. Giotta; C. Grangier; Laurent Mollard; A. Perez; F. Rochette; Laurent Rubaldo; C. Vaux; J. Vigneron; J.-P. Zanatta

This paper reports the first implementation in our laboratory of a chemical–mechanical polishing (CMP) process for CdZnTe (CZT) substrates prepared for growth of HgCdTe layers by liquid phase epitaxy and molecular beam epitaxy. The process enables significant reduction of the thickness of the damaged zone induced by the mechanical polishing that must be etched away before epitaxy. Resulting improvements in surface morphology, in terms of waviness and density of point defects, are reported. The chemical state of surfaces polished by CMP was characterized by x-ray photoelectron spectroscopy. The chemical state was highly homogeneous; comparison with a reference surface is reported. End use assessment of this surface processing was compared with that of reference substrates by preparation of focal-plane arrays in the medium-wavelength infrared spectral range, by using epitaxial layers grown on substrates polished by different methods. The electro-optical performance of the detectors, in terms of photovoltaic noise operability, are reported. The results reveal that the state of this CMP surface is at the level of the best commercial substrates.


Infrared Technology and Applications XLIV | 2018

Achievement of high image quality MCT sensors with Sofradir vertical industrial model

Laurent Rubaldo; Pierre Guinedor; Alexandre Brunner; Paul Fougères; Armelle Kapferer; A. Kerlain; Augustin Cathignol; François Boulard; Olivier Gravrand; Valery compain; Loïc Dargent; Delphine Brellier; V. Destefanis; Diane Sam-Giao

SOFRADIR is the worldwide leader on the cooled IR detector market for high-performance space, military and security applications thanks to a well mastered Mercury Cadmium Telluride (MCT) technology, and recently thanks to the acquisition of III-V technology: InSb, InGaAs, and QWIP quantum detectors. This is the result of strong and continuous development efforts to deliver cutting edge products with improved performances in terms of spatial and thermal resolution, dark current, quantum efficiency, low excess noise and high operability. On one hand the advanced performances of Sofradir product rely on a strong partnership with CEA-LETI materialized in a common laboratory named DEFIR. On the other hand, these cutting edge performances are made possible thanks to Sofradir vertical industrial model. From the CdZnTe (CZT) and HgCdTe (MCT) crystal growth to the last electro-optical characterization recipe before shipping, and all the intermediate steps in between like IDDCA (Integrated Detector Dewar Cooler Assembly) final pumping cycle, all the manufacturing steps are developed, performed and controlled inhouse. This allows direct feedback between IDDCA, system performances and process or material. State of the art relevant performances for IR detection and imaging will be presented, that is to say low excess noise defects, RFPN (Residual Fixed Pattern Noise), NUC (Non Uniformity Correction) table stability for Daphnis product, 10μm pitch XGA extended MW matrix at 110K and HOT (High Operating Temperature) p-on-n technology, VGA format with 15μm pitch MW at 160K.


Proceedings of SPIE | 2015

RMS noise modeling and detection for high-reliability HgCdTe infrared focal plane arrays development

Augustin Cathignol; G. Vauquelin; Alexandre Brunner; V. Destefanis; Laurent Rubaldo; Magalie Maillard; M. Runtz

This paper presents recent improvements introduced in production lines of Mid-Wavelength Infra-Red (MWIR) and Long-Wavelength Infra-Red (LWIR) HgCdTe detectors that increase performances, image quality, and reliability. This was achieved thanks to accurate characterization of RMS noise distributions. Based on many MWIR and LWIR devices RMS distributions, a RMS noise distribution model that accounts for both Background Limited diodes and 1/f noise affected isolated diodes is first proposed. Then, a figure of merit for quantifying the defective pixels is introduced. This figure of merit is shown to be easy to use and robust to statistical variability. Moreover, it does also very well correlate with physics : there is high correlation between the total number of calculated defects and other figures of merit that gauge the material quality or the low frequency noise. The ability to accurately and efficiently quantify RMS noise benefits to Sofradir in its development of highly reliable and performant technologies. Such benefits are illustrated on the latest Sofradir MWIR and LWIR technologies that are demonstrated to be very robust regarding thermal stress and thermal cycling. Finally those technologies are shown to reach high image quality and stability.


Quantum Sensing and Nano Electronics and Photonics XV | 2018

Sofradir vertical industrial model for high-image-quality MCT detectors

Paul Fougères; Diane Sam-Giao; A. Kerlain; François Boulard; Valery compain; Delphine Brellier; Laurent Rubaldo; Pierre Guinedor; Alexandre Brunner; V. Destefanis; Loïc Dargent; Augustin Cathignol; Olivier Gravrand; Armelle Kapferer

SOFRADIR is the worldwide leader on the cooled IR detector market for high-performance space, military and security applications thanks to a well mastered Mercury Cadmium Telluride (MCT) technology, and recently thanks to the acquisition of III-V technology: InSb, InGaAs, and QWIP quantum detectors. This is the result of strong and continuous development efforts to deliver cutting edge products with improved performances in terms of spatial and thermal resolution, dark current, quantum efficiency, low excess noise and high operability. On one hand the advanced performances of Sofradir product rely on a strong partnership with CEA-LETI materialized in a common laboratory named DEFIR. On the other hand, these cutting edge performances are made possible thanks to Sofradir vertical industrial model. From the CdZnTe (CZT) and HgCdTe (MCT) crystal growth to the last electro-optical characterization recipe before shipping, and all the intermediate steps in between like IDDCA (Integrated Detector Dewar Cooler Assembly) final pumping cycle, all the manufacturing steps are developed, performed and controlled inhouse. This allows direct feedback between IDDCA, system performances and process or material. State of the art relevant performances for IR detection and imaging will be presented, that is to say low excess noise defects, RFPN (Residual Fixed Pattern Noise), NUC (Non Uniformity Correction) table stability for Daphnis product, 10μm pitch XGA extended MW matrix at 110K and HOT (High Operating Temperature) p-on-n technology, VGA format with 15μm pitch MW at 160K.


Infrared Technology and Applications XLIV | 2018

From CdZnTe bulk growth to HgCdTe infra-red detectors: mastering the chain for high-performance and reliable imaging

Augustin Cathignol; Armelle Kapferer; Alexandre Brunner; Paul Fougères; Cécile Roman-Tinnes; Marie-Christine Manzato; Yann Loreau; Sandrine Chabanet; Yann Reibel; Stephen Giraud; Laurent Rubaldo; V. Destefanis; Delphine Brellier; Erik Gout

High-performance infrared detectors based on HgCdTe technology require high quality epilayers, for which bulk CdZnTe is considered as the ideal substrate, thanks to its ability to perfectly match its lattice constant. Reaching very high crystal quality of the material in terms of subgrain boundary absence, low dislocation density, homogeneous zinc distribution, and low micro-defect density is paramount to obtaining excellent image quality. Sofradir takes advantage of growing its own CdZnTe crystals for producing substrates, and thus controlling the quality of HgCdTe epilayers, which allows reaching high-performance imaging. Indeed, mastering the whole manufacturing chain from raw material to Focal Plane Array and throughout all the front-end and back-end steps delivers a unique opportunity for process improvements. This paper shows how the latest process improvements do translate into detector image quality and reliability improvements, focusing on Front End process (substrates and epilayers), showing for the first time correlation between substrate microscopic defects and FPA image quality. This was achieved thanks to the research collaboration between Sofradir and CEA-LETI. This global process optimization is done thanks to a large set of characterizations performed at each process step, such as IR-microscopy for the substrate inspection, chemical revelation of dislocations and x-ray double-crystal rocking curve mappings for the epitaxial layer. Image quality is examined in terms of operability, and excess noise. Finally, in addition to process improvements, knowing how each critical process step impacts the following one and translates into the final image quality allows sorting units at the right process step, which serves yield and product quality. These benefits of the Sofradir’s vertical integration model are illustrated on MWIR and LWIR technologies.


Journal of Electronic Materials | 2016

Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations

A. Kerlain; Alexandre Brunner; Diane Sam-Giao; Nicolas Péré-Laperne; Laurent Rubaldo; V. Destefanis; F. Rochette; C. Cervera


Journal of Electronic Materials | 2014

Improvement of RTS Noise in HgCdTe MWIR Detectors

Alexandre Brunner; Laurent Rubaldo; V. Destefanis; Fabien Chabuel; A. Kerlain; D. Bauza; Nicolas Baier


Journal of Electronic Materials | 2017

Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe

B. Delacourt; Ph. Ballet; F. Boulard; A. Ferron; L. Bonnefond; T. Pellerin; A. Kerlain; V. Destefanis; Johan Rothman


Journal of Electronic Materials | 2016

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

Y. Fourreau; K. Pantzas; G. Patriarche; V. Destefanis


Journal of Electronic Materials | 2018

Shockley–Read–Hall Lifetime Study and Implication in HgCdTe Photodiodes for IR Detection

O. Gravrand; J. Rothman; B. Delacourt; F. Boulard; C. Lobre; Ph. Ballet; J. L. Santailler; C. Cervera; D. Brellier; Nicolas Péré-Laperne; V. Destefanis; A. Kerlain

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