Wendell Boyd

Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer

Abstract Implantation of boron at sub-keV energies, combined with rapid thermal annealing in the temperature range from 900 to 1050 °C with soak times of 20 s or less results in activated junctions with depths of the order of 50 nm. These depths are consistent with roadmap estimates of transistor requirements for 100 nm scale devices for 16 Gb DRAM technology.

Consideration of in-line qualification for ultrashallow junction implantation

The electrical characteristics of shallow junction devices are often dependent on tightly controlled ion implants for their performance and yield. However, concerns exist over the ability of existing in-line metrology tools to accurately verify low energy implants, and therefore, determine whether the ion implanter is in control before committing product to it. This article will explore the capabilities of the Therma-Probe TP500, the Tencor OmniMap RS75, and secondary-ion-mass spectroscopy to measure low energy ion implants done on an Applied Materials xR-LEAP with energies 10 keV and below, doses of 1.0E15–3.0E15 cm−2, and both boron and arsenic species.

Development and applications of a beam energy filter for the PI9200XJ high current implanter

A reversed bias filter and enhanced post-acceleration electrodes have been developed for the PI9200XJ high current implanter to reduce the ion beam energy contamination. The use of the energy filter for 49 BF 2 implants reduces the atomic concentration of the dissociated fast boron to less than 0.1% of the peak atomic concentration of the boron from 49 BF 2 .