Wensuo Chen

Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode

A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.

New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC

A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Controlled Anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power ICs process steps, and it is useful for PDP scan driver IC.

Fast speed lateral IGBT with Buried N-region Controlled Anode on SOI substrate

A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Buried N-region Controlled Anode LIGBT (BNCA-LIGBT), is proposed and discussed. The BNCA-LIGBT is a modified structure of the N-region Controlled Anode LIGBT (NCA-LIGBT) which we have presented earlier. Numerical simulation results of the BNCALIGBT operation show that the turn-off speed is faster and on-state voltage drop is lower than that of the NCA-LIGBT. Furthermore, the BNCA-LIGBT also has the advantages of NCA-LIGBT such as efficient area using, easy driving, effectively NDR suppression in forward I–V characteristics and high breakdown voltage. The proposed SOIBNCA-LIGBT can be fabricated by the conventional SOI power ICs process steps.