Won-joo Kim

A 1.5Mpixel RGBZ CMOS image sensor for simultaneous color and range image capture

A 1.5Mpixel RGBZ image sensor that simultaneously captures color (RGB) and time-of-flight (ToF) range (Z) images is presented. While ToF sensors are well documented, few, if any, monolithic sensors have been reported that capture both range and color. In one sensor, a combined pixel structure captures color and range, but presumably in sequential fields. This approach does not allow simultaneous capturing of range with color, and the pixel performance cannot be optimized for each mode. In thie paper, we introduce a sensor that is designed to capture color and range simultaneously with individually optimized pixels.

Paired FinFET Charge Trap Flash Memory for Vertical High Density Storage

A new type of memory, paired FinFET charge trap memory is reported. It consists of two split silicon fins and insulator between them. Two channels are formed on the outer surface of silicon so doubled integration density can be achieved. We successfully fabricated paired FinFET SONOS devices. It shows good program and erase characteristics. Independent programming on each storage nodes is demonstrated. The circuit configuration for NAND flash application is also proposed

Investigation of 1T DRAM cell with non-overlap structure and recessed channel

In this paper, a capacitor-less 1T DRAM cell transistor with non-overlap structure and recessed channel is presented. Because of the non-overlap structure between gate and source/drain, GIDL (Gate Induced Drain Leakage) current is efficiently suppressed at hold condition. This results in more than 1 s retention time at 25 °C and 100 ms at 85 °C

Vertical Structure NAND flash array integration with paired FinFET multi-bit scheme for high-density NAND flash memory application

Multi-bit vertical structure NAND (VsNAND) flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array integration issues regarding the sub-10 nm vertical structure fin could be solved by proper choices of isolation material, ion implantation, and word line patterning. VsNAND flash array cells with TANOS (TaN/Al2O3/SiN/SiOx/Si) charge trap structure show possibilities of acceptable program/erase properties and cell Vth distribution characteristics for multi-level NAND flash application.

A 192×108 pixel ToF-3D image sensor with single-tap concentric-gate demodulation pixels in 0.13 µm technology

A single-tap concentric photogate pixel of 28 µm pitch is developed for application to time-of-flight (ToF) three dimension (3D) image sensors. The 198×108 ToF pixel array exhibits demodulation contrast higher than 50% and distance error less than 1%, over 1 to 7 m range using 20MHz modulation of 850 nm light emitting diode (LED) illumination.