Xudong Wan

Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

For the first time, the design and fabrication of dual-trench epitaxial p/n junction diodes in a commercially standard 0.13-μm complementary metal-oxide-semiconductor process are introduced in this letter. The 16 × 16 diode arrays with 0.196-μm2 (5F2) cell size have been successfully fabricated, showing the excellent electrical properties of its sufficient current drive ability in excess of 12.5 mA/μm2, large on-/off-current ratio greater than nine orders of magnitude, and its excellent crosstalk immunity. A dual-trench epitaxial diode could be used as the access device for high-density phase-change memory and could also produce highly scalable embedded applications for 45-nm node and beyond, due to its unique process integration scheme.

16kb Phase Change Memory Test Chip with 0.18-μm Process

A 16kb phase change memory with standard CMOS 0.18-μm test chip has been demonstrated. The critical integration technology of the phase change material fabrication and the standard CMOS process has been improved. Full integration of PCRAM, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. Test results about PCM cell and circuit module has been generated.