Y.Y. Liu

A High-Sensitivity Photon Emission Microscope System with Continuous Wavelength Spectroscopic Capabi

A new spectroscopic photon emission microscope system (SPEMS) with high-sensitivity and continuous wavelength spectroscopic capability is presented. With the specially-designed light collection and transmission optics, high- resolution spectral characteristics can be acquired from very low-level light emissious. Two new wavelength parameters have been introduced to describe the bias-dependent spectral variation. The potential use of these two parameters as well as the spectral characteristics to identify failure mechanisms is also discussed.

A new spectroscopic photon emission microscope system for semiconductor device analysis

This paper describes the design and performance of a new spectroscopic photon emission microscope system (SPEMS) with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analysed because of the highly efficient light collection and transmission optics. Results shown include that of MOS transistors biased in saturation, forward and reverse biased pn junctions and oxide leakage. The potential use of the defect finger-printing technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed.

Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope

Two normalisation methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: /spl lambda//sub 1.0/ and /spl lambda//sub 50%/, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices.

A degradation monitor for the light output of LEDs based on cathodoluminescence signals and junction ideality factor

A degradation monitor that allows the prediction of the light output degradation of light emitting diodes is described. This is based on the variation of the differential cathodoluminescence signal output to distinguish between good and bad devices. A corresponding method using the variation of the junction ideality factor during stressing is also described.

An integrated (automated) photon emission microscope and MOSFET characterisation system for combined microscopic and macroscopic device analysis

This article describes the design and performance of an integrated characterization system for the physical microscopic analysis and macroscopic reliability characterization of MOSFETs under hot-carrier stressing conditions. The system includes the photon emission microscopic localization of the photon emitting device(s), spectroscopic measurement of the emitted light, hot-carrier stressing and lifetime estimation, charge-pumping measurement and profiling, gated-diode measurement, capacitance-voltage measurement and flicker-noise characterization.

Design and performance of a new spectroscopic photon emission microscope system for the physical analysis of semiconductor devices

This article describes the design and performance of a new spectroscopic photon emission microscope system with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analyzed because of the highly efficient light collection and transmission optics. Results shown include those metal oxide semiconductor transistors biased in saturation, forward and reverse biased p‐n junctions, and oxide leakage. The potential use of the ‘‘defect fingerprinting’’ technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed.

Can physical analysis aid in device characterization

Abstract Recent developments in electrical characterization and physical analysis techniques have led to new benefits from their combined application, especially in the investigation of device degradation and failure analysis. Drawing from two examples, one on silicon transistor devices and the other on III–V light-emitting diodes, results will be presented to illustrate that the combined application of such techniques does introduce interesting possibilities in analysing and understanding device degradation problems.

Study on LED degradation using CL, EBIC and a two-diode parameter extraction model

LED degradation was investigated using cathodoluminescence (CL), electron-beam-induced current (EBIC) and device parameter extraction using a two-diode model. After electrical stress, the nonradiative recombination current increases, and the electroluminescence (EL) intensity at constant current bias decreases. The average EBIC and CL intensities also decrease. There is a good correlation between CL, EL and EBIC measurements. The two-diode model can reasonably model the LED degradation behaviour.