Yarkyeon Kim

A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect.

Characterization of erbium-silicided Schottky diode junction

Trap density, lifetime, and the Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted trap density, lifetime, and Schottky barrier height for hole are determined as 1.5/spl times/10/sup 13/ traps/cm/sup 2/, 3.75 ms and 0.76 eV, respectively. By using the developed method, the interface of the Schottky diode can be evaluated quantitatively.

Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

The authors investigate the electrical and structural properties of high-k Er-silicate film formed by the interfacial reaction between Er and SiO2 films. The increase in rapid thermal annealing temperature leads to the reduction of the interface trap density by one order of magnitude, indicating the improvement in the interface quality of Er-silicate gate dielectric. The increased capacitance value of Er-silicate gate dielectric with thermal treatment is attributed in part to the reduction of SiO2 thickness and to the increase in the relative dielectric constant of Er-silicate film caused by the chemical bonding change from Si-rich to Er-rich silicate.

Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors

Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal–oxide–semiconductor field-effect transistors (SB-MOSFETs) with a 5 nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current less than 10 nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity.

Fabrication of Large-Area Hierarchical Structure Array Using Siliconized-Silsesquioxane as a Nanoscale Etching Barrier

A material approach to fabricate a large-area hierarchical structure array is presented. The replica molding and oxygen (O2) plasma etching processes were combined to fabricate a large-area hierarchical structure array. Liquid blends consisting of siliconized silsesquioxane acrylate (Si-SSQA), ethylene glycol dimethacrylate (EGDMA), and photoinitiator are developed as a roughness amplifying material during O2 plasma etching. Microstructures composed of the Si-SSQA/EGDMA mixtures are fabricated by replica molding. Nanoscale roughness on molded microstructures is realized by O2 etching. The nanoscale roughness on microstructures is efficiently controlled by varying the etching time and the weight ratio of Si-SSQA to EGDMA. The hierarchical structures fabricated by combining replica molding and O2 plasma etching showed superhydrophilicity with long-term stability, resulting in the formation of hydroxyl-terminated silicon oxide layer with the reorientation limit. On the other hand, the hierarchical structures modified with a perfluorinated monolayer showed superhydrophobicity. The increment of water contact angles is consistent with increment of the nano/microroughness of hierarchical structures and decrement of the top contact area of water/hierarchical structures.

Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

The authors have developed a new equivalent circuit model to analyze the charging dynamics of the interface states in Schottky barrier diodes at reverse bias condition. Trap density and the capture/emission times are extracted by incorporating the measured ac admittance of erbium silicide Schottky diode with the newly developed equivalent circuit model. The extracted trap density is 1.5×1012cm−2eV−1 and the capture and emission transition times are 19 and 5.9μs, respectively. Trap density decreases to 6.1×109cm−2eV−1 after N2 annealing.

Silicone-Based Adhesives with Highly Tunable Adhesion Force for Skin-Contact Applications

A fundamental approach to fabricating silicone-based adhesives with highly tunable adhesion force for the skin-contact applications is presented. Liquid blends consisting of vinyl-multifunctional polydimethylsiloxane (V-PDMS), hydride-terminated PDMS (H-PDMS), and a tackifier composed of a silanol-terminated PDMS/MQ resin mixture and the MQ resin are used as the adhesive materials. The peel adhesion force of addition-cured adhesives on the skin is increased by increasing the H-PDMS molecular weights and the tackifier content, and decreasing the H-PDMS/V-PDMS ratio. There is an inverse relationship between the adhesion force and the Youngs modulus. The low-modulus adhesives with a low H-PDMS/V-PDMS ratio exhibit enhanced adhesion properties. The low-modulus adhesives with the high MQ resin content show significantly enhanced adhesion properties. These adhesives exhibit a wide range of modulus (2-499 kPa), and their adhesion force (0.04-5.38 N) is superior to commercially available soft silicone adhesives (0.82-2.79 N). The strong adhesives (>≈2 N) provide sufficient adhesion for fixing the flexible electrocardiogram (ECG) device to the skin in most daily activity. The human ECG signals are successfully recorded in real time. These results suggest that the silicone-based adhesives should be useful as an atraumatic adhesive for the skin-contact applications.

The control of oscillation mode in silicon microbeams using silicon nitride anchor

We designed and fabricated gravimetric sensors composed of silicon (Si) microbeams surrounded by silicon nitride (SiN) anchors. The oscillation properties of the fabricated devices show that a single oscillation mode originating from quasi-one-dimensional microbeams appears at an applied alternating electric field, which motion is well matched to the theoretical predictions and is much different from the dimensionally mixed oscillation modes in normal non-anchored devices. In addition, in order to elucidate the possibilities of the devices for mass sensing applications, we measured the frequency shift as a function of mass loading in a self-assembled monolayer of 3-aminopropyltrimethoxysilane and Au nanoparticles. The resulting limit of detection was 1.05 × 10−18 g/Hz, which is an extremely high value for micro electromechanical system gravimetric sensors relative to the normal ones.

Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt‐Er Alloy Metal Gate on HfO2 Film

High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO 2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO 2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtO x and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO 2 interface quality.

Attogram mass sensing based on silicon microbeam resonators

Using doubly-clamped silicon (Si) microbeam resonators, we demonstrate sub-attogram per Hertz (ag/Hz) mass sensitivity, which is extremely high sensitivity achieved by micro-scale MEMS mass sensors. We also characterize unusual buckling phenomena of the resonators. The thin-film based resonator is composed of a Si microbeam surrounded by silicon nitride (SiN) anchors, which significantly improve performance by providing fixation on the microbeam and stabilizing oscillating motion. Here, we introduce two fabrication techniques to further improve the mass sensitivity. First, we minimize surface stress by depositing a sacrificial SiN layer, which prevents damage on the Si microbeam. Second, we modify anchor structure to find optimal design that allows the microbeam to oscillate in quasi-one dimensional mode while achieving high quality factor. Mass loading is conducted by depositing Au/Ti thin films on the local area of the microbeam surface. Using sequential mass loading, we test effects of changing beam dimensions, position of mass loading, and distribution of a metal film on the mass sensitivity. In addition, we demonstrate that microbeams suffer local micro-buckling and global buckling by excessive mass loading, which are induced by two different mechanisms. We also find that the critical buckling length is increased by additional support from the anchors.