Yasutaka Maeda

Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer

A pentacene-based organic field-effect transistor (OFET) is necessary to work at a low operation voltage and a steep subthreshold swing. The subthreshold swing of pentacene-based OFET was markedly improved by introducing a nitrogen-doped LaB6 interfacial layer (N-doped LaB6 IL) although charge-injection-type hysteresis was observed in I D–V G characteristics. In this study, the thickness dependence of N-doped LaB6 IL for p-type pentacene-based OFET was investigated. A 1.2–2.7-nm-thick N-doped LaB6 IL was deposited on an SiO2 gate insulator by RF sputtering at an RF power of 20–30 W. It was found that a 1.2-nm-thick N-doped LaB6 IL realized a steep subthreshold swing of 75 mV/dec with a mobility of 0.26 cm2/(Vs) for p-type pentacene-based OFET.

Narrow line crystallization of rubrene thin film enhanced by Yb interfacial layer for single crystal OFET application

Rubrene is one of the most promising organic semiconductor for OFET application. The high hole mobility such 1.21 cm2/(Vs) has been reported for the OFET with rubrene thin film evaporated on SiO2 gate insulator for bottom-g; geometry [1]. However, the crystallization of rubrene thin film on SiO2 is difficult to be controlled. A self-assembled monolayer (SAM) scheme is often used to realize the good crystallinigy of organic semiconductor films. However, it 1 an issue in terms of the uniformity which would be an issue of large scale integration of OFETs. In this paper, we ha investigated the narrow line crystallization of rubrene thin film utilizing Yb interfacial layer, which is able to be in-s deposited in a same chamber for rubrene deposition, for the first time.