Yinglei Wang

Equivalent junction transformation: a semi-empirical analytical method for predicting the breakdown characteristics of cylindrical- and spherical-abrupt P–N junctions ☆

Abstract A semi-empirical analytical method called as the equivalent junction transformation has been proposed in this paper for the first time, and used to predict the breakdown characteristics of curved-abrupt P–N junctions. Based on this method, the effects of the radius of curvature of the metallurgical junction and the background doping concentration on the breakdown voltage, peak electrical field and depletion layer width at breakdown for cylindrical- and spherical-abrupt junctions are discussed in detail. All analytical results have shown in excellent agreement with the numerical analysis, showing the validity of the method presented here.

Numerical study on heterodyne terahertz detection in field effect transistor

Numerical method on the heterodyne terahertz detection characteristics of field effect characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.

Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor

Abstract A complete analysis of Terahertz (THz) wave generation and detection of Silicon Nanowire MOS Field-Effect Transistor (SNFET) is presented in this paper. Based on the developed SNFET-THz device theory, the dependence of THz detection of SNFET on bias and structure parameters are obtained and illustrated. The numerical technique to solve fluid dynamic equation groups, which govern the THz wave transport in SNFET, is also introduced. Based on the developed numerical tool, the THz generation and its instability are demonstrated and analyzed in details. From developed numerical simulation program, the evolution processes of THz plasma wave in generation and detection modes are presented.

Punsim: an advanced surface potential based MOSFET model

This paper reviews present compact model development and outlines the main features of the PUNSIM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; accurate description of inversion charge; Physics based channel current equation and calculation; self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

A compact model to predict sub-band energy levels and inversion charge centroids in the MOSFET surface inversion layer has been presented in this paper for parabolic potential well approximation. Based on a coupled solution of the Schrödinger equation and the Poisson equation following the WKB method, one transcendental equation of the sub-band energy level has been rigorously derived and then the approximate analytical solutions for the sub-band energy levels and the inversion charge centroids have been obtained. The analytical results are compared with the numerical data and a good agreement between the analytical and numerical is found.

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection characteristics under the case of optical beating. Furthermore, extensive characteristics of resonant detection under the optical beating mode have been predicted.

Terahertz Wave Generation and Detection Analysis of Nanowire Gated Field Effect Transistor

A complete analysis of terahertz(THZ) wave generation and detection of silicon nanowire gated field effect transistor (SNFET) is presented in this paper. Based on the developed SNFET THZ device theory, the dependence of THZ detection of SNFET on bias and structure parameters are obtained and illustrated. The THZ generation condition and various unique characteristics are also demonstrated and analyzed in details. The numerical skills utilized in this paper are also described. Based on the developed numerical tool, the evolution processes of plasma wave in generation and detection mode are also presented.