Yong-Hun Oh

A burst-mode receiver for 1.25-Gb/s ethernet PON with AGC and internally created reset signal

A burst-mode receiver for 1.25 Gb/s Ethernet passive optical network (PON) systems is implemented in 0.18 /spl mu/m CMOS technology. With AGC, the receiver achieves a sensitivity of -22 dBm, overload of -3.5 dBm and loud/soft ratio of 17.5 dB. The receiver creates an internal reset signal, and all timing parameters exceed current standards.

Image-rejection CMOS low-noise amplifier design optimization techniques

This paper reviews and analyzes two reported image-rejection (IR) low-noise amplifier (LNA) design techniques based on CMOS technology, i.e., the second-order active notch filer and third-order passive notch filter. The analyses and discussions are based on the quality factor of filters and the ability of the frequency control. As the solution to deal with the suitable on-chip filter, this paper proposes a new notch-filter topology that can overcome the limitations of the two previous reported studies. In addition, the LNA design method satisfying the power-cons-trained simultaneous noise and input matching, as well as the linearity optimization conditions is introduced. By using the proposed notch filter and proposed design methodology, an IR LNA used in the superheterodyne architecture is implemented. The proposed IR LNA, designed based on 0.18-mum CMOS technology with total current dissipation of 4 mA under 3-V supply voltage, is optimized for a 5.25-GHz wireless local area network with IF frequency of 500-MHz applications. The measurement results show 20.5-dB power gain, lower than 1.5-dB noise figure, -5-dBm input-referred third-order intercept point and an IR of 26 dB

An inductance enhancement technique and its application to a shunt-peaked 2.5 Gb/s transimpedance amplifier design

This brief presents a bandwidth enhancement technique that is applicable to gigahertz-range broadband circuits. Using the inductance enhancement technique proposed in this brief, a 2.5-Gb/s transimpedance amplifier (TIA) has been implemented based on a 0.35-/spl mu/m CMOS technology. With the input noise reduction, the TIA with the proposed active inductor loads improves the overall system performances including more that 90% increase in bandwidth. Measurements show the bandwidth of 1.73 GHz, transimpedance gain of 68 dB/spl Omega/, and the averaged input referred noise current of 3.3 pA//spl radic/Hz, respectively, while dissipating 50 mW of dc power.

A CMOS burst-mode optical transmitter for 1.25-Gb/s ethernet PON applications

This brief presents a CMOS burst-mode optical transmitter suitable for use in 1.25-Gb/s Ethernet passive optical network applications. Based on feedback from the monitoring photodiode, in order to control consecutive burst data the proposed transmitter in this brief uses a reset mechanism, which allows fast responses from the beginning of a high-speed input burst. The chip is fabricated in mixed-mode 0.18-/spl mu/m CMOS technology and measurements are implemented in a chip-on-board configuration using a pig-tailed type Fabry-Perot laser. Under burst-mode operation of 1.25-Gb/s pseudorandom binary sequences, measurements show about 1-dBm averaged transmitted optical power with an over 12-dB extinction ratio over a wide temperature range.

Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]

This paper presents a burst-mode 1.25 Gb/s transmitter, suitable for use in Ethernet PON (E-PON) applications. With a burst enable signal, the transmitter proposed in this paper allows fast responses from the beginning of high-speed burst data while a conventional automatic power control circuit, based on feedback from a monitor photodiode, was used. The chip was implemented in 0.18 /spl mu/m CMOS technology and occupies an area of 0.9/spl times/0.75 mm/sup 2/ with about 260 mW power dissipation under 3.3 V supply. Measurements show a stable transmitted optical power over a wide temperature range (-40/spl deg/C to 80/spl deg/C) with above 10 dB extinction ratio.

A high linearity, efficient bandwidth, and high stability transimpedance amplifier

This paper presents a new high performance wideband CMOS transimpedance amplifier (TIA) for 2.5 Gbps optical transceiver. Our proposed TIA self-regulating adjusts the controllable inductive peeking load and feedback resistances whenever overload condition occurs. The proposed TIA design exhibits bandwidth enhancement, lower input referred noise, and higher amplifier stability. This TIA has 69 dBOmega gain at 3 dB bandwidth, 7.2 pA/radicHz input referred noise and good performance of eye diagram. The TIA operates at the 3.3 V supply voltage, and dissipates about 34 mA for whole circuit. The simulation is accomplished with 1 pF capacitance and 0.85 A/W responsibility photodiode model

A fully integrated CMOS burst-mode upstream transmitter for gigabit-class passive optical network applications

A fully integrated burst-mode upstream transmitter chip for gigabit-class passive optical network applications is implemented in 0.18mum CMOS technology. In order to control consecutive burst data, the transmitter proposed in this paper uses a reset mechanism with TX_enable as a burst envelope signal. The feedback from the monitoring photodiode (MPD) is separated by two independent paths for temperature compensation. The chip tested with chip-on-board configuration shows an average power of 2dBm with extinction ratio of above 12dB under 1.25Gb/s burst- mode operation. Based on the measurement, this work complies with the GPON ITU-T Recommendation G.984.2.

A CMOS burst-mode up-stream transmitter for fiber-optic gigabit ethernet applications

A fully integrated fiber-optic transmitter chip for gigabit Ethernet applications has been implemented in a CMOS technology. For controlling the transmitted optical power so to obtain reliable and constant averaged optical power, the transmitter proposed in this paper uses separated bias and modulation currents control circuits based on the feedback from the monitoring photo-diode (MPD). The chip was fabricated in a mixed-signal analog CMOS technology with 0.18mum gate length and measurements were implemented in a chip-on-board configuration (COB) using pig-tailed FP laser. Under the burst-mode operation of 1.25Gb/s PRBS, measurements show about 0.5dBm transmitted optical power with above 11dB extinction ratio over a wide temperature range. Based on the measurements, this work complies with the EPON IEEE P802.ah standard