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Dive into the research topics where Yoram Betser is active.

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Featured researches published by Yoram Betser.


international memory workshop | 2013

Advancement in Charge-Trap Flash memory technology

Saied Tehrani; James Pak; Mark Randolph; Yu Sun; Sameer Haddad; Eduardo Maayan; Yoram Betser

Charge-trap Flash memory has been successfully productized in high volume for several technology generations. Two-bits-per-cell MirrorBit® charge-trap technology has been the industry benchmark for NOR Flash for more than a decade, spanning six generations of scaling. More recently Heterogeneous Charge Trap (HCT)™ NAND Flash as well as embedded Charge Trap (eCT)™ NOR Flash have been developed. The planar cell structures will enable continued scaling of these charge-trap technologies, while new architectures such as 3D charge-trap Flash will emerge and further extend the density-growth trend.


international solid-state circuits conference | 2006

A 4b/cell NROM 1Gb Data-Storage Memory

Yan Polansky; Avi Lavan; Ran Sahar; Oleg Dadashev; Yoram Betser; Guy M. Cohen; Eduardo Maayan; Boaz Eitan; Ful-Long Ni; Yen-Hui Joseph Ku; Chih-Yuan Lu; Tim Chang-Ting Chen; Chun-Yu Liao; Chin-Hung Chang; Chung-Kuang Chen; Wen-Chiao Ho; Yite Shih; Wenchi Ting; Wen-Pin Lu

A 4b/cell 1Gb data flash based on a low-cost NROM process technology is achieved. The design includes a two-phase programming algorithm for supporting a fast and accurate threshold-voltage control. The read scheme incorporates a simple error-detection mechanism combined with an accurate drain-side sensing circuit with a built-in offset cancellation


international solid-state circuits conference | 2008

A 4b/Cell 8Gb NROM Data-Storage Memory with Enhanced Write Performance

Ran Sahar; Avi Lavan; Eran Geyari; Amit Berman; Itzic Cohen; Ori Tirosh; Kobi Danon; Yair Sofer; Yoram Betser; Amichai Givant; Alexander Kushnarenko; Yaal Horesh; Ron Eliyahu; Eduardo Maayan; Boaz Eitan; Wang Pei Jen; Yan Feng; Lin Ching Yao; Kwon Yi Jin; Kwon Sung Woo; Cai En Jing; Yi Jing Jing; Kim Jong Oh; Yi Guan Jiun

The increasing demand for cost reduction of data storage solutions calls for both cell-size shrink, as well as compressing more bits of data into the storage element. Yet the low cost solution is required to have fast enough write operation to fit density-hungry applications. An 8 Gb data flash storage device based on 4b/cell NROM technology is presented in this paper. A major improvement in write time is accomplished through improvement of programming techniques, erase scheme and sensing methods.


international solid-state circuits conference | 2004

A 55 mm/sup 2/ 256 Mb NROM flash memory with embedded microcontroller using an NROM-based program file ROM

Yair Sofer; M. Edan; Yoram Betser; M. Grossgold; Eduardo Maayan; Boaz Eitan

A 256 Mb flash memory based on 2 b/cell 0.17 /spl mu/m NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 /spl mu/s/word programming. This 55 mm/sup 2/ device includes an 8 b embedded microcontroller for program and erase operations, power-up sequence, BIST, and more. The microcontroller executes its code from an NROM-based embedded ROM, performing 30 ns/word read access.


Archive | 2008

Minimizing read disturb in an array flash cell

Yoram Betser; Yair Sofer; Oren Shlomo; Avri Harush


Archive | 2005

Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells

Yoram Betser; Yair Sofer; Eduardo Maayan


Archive | 2006

Dynamic matching of signal path and reference path for sensing

Yair Sofer; Eduardo Maayan; Yoram Betser


Archive | 2006

Apparatus and methods for multi-level sensing in a memory array

Oleg Dadashev; Yoram Betser; Eduardo Maayan


Archive | 2006

Measuring and controlling current consumption and output current of charge pumps

Yoram Betser; Alexander Kushnarenko; Oleg Dadashev


Archive | 2004

MOS capacitor with reduced parasitic capacitance

Joseph Shor; Eduardo Maayan; Yoram Betser

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Oleg Dadashev

Tower Semiconductor Ltd.

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