Yair Sofer

A 4b/Cell 8Gb NROM Data-Storage Memory with Enhanced Write Performance

The increasing demand for cost reduction of data storage solutions calls for both cell-size shrink, as well as compressing more bits of data into the storage element. Yet the low cost solution is required to have fast enough write operation to fit density-hungry applications. An 8 Gb data flash storage device based on 4b/cell NROM technology is presented in this paper. A major improvement in write time is accomplished through improvement of programming techniques, erase scheme and sensing methods.

A 55 mm/sup 2/ 256 Mb NROM flash memory with embedded microcontroller using an NROM-based program file ROM

A 256 Mb flash memory based on 2 b/cell 0.17 /spl mu/m NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 /spl mu/s/word programming. This 55 mm/sup 2/ device includes an 8 b embedded microcontroller for program and erase operations, power-up sequence, BIST, and more. The microcontroller executes its code from an NROM-based embedded ROM, performing 30 ns/word read access.