Yuh-Jen Cheng

High‐Gain Phototransistors Based on a CVD MoS2 Monolayer

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.

Patterned structure of remote phosphor for phosphor-converted white LEDs.

High efficiency white light-emitting diodes with superior color-mixing have been investigated. It is suggested that the patterned remote phosphor structure could improve the uniformity of angular-dependent correlated color temperature (CCT) and achieve high chromatic stability in wider operating current range, as compared to the conventional remote phosphor coating structure. In this experiment, we employed a pulse spray coating method to place the patterned phosphor on the package and to leave a window region. The window area, a clear space without coating of the phosphor not only increases the extraction efficiency of blue rays at large angle, but also improves the stability of angular-dependent CCT. Moreover, the CCT deviation could be reduced from 1320 K to 266 K by this patterned remote phosphor method, and the stray blue/yellow light within the package can be effectively reduced and controlled. The design was verified both experimentally and theoretically.

Broadband and omnidirectional antireflection employing disordered GaN nanopillars

Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral antireflective characteristics, up to an incident angle of 60? and for the wavelength range of lambda=300-1800 nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p- polarizations.

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

Core-shell InGaN/GaN multiple quantum wells (MQWs) on GaN nanopillars were fabricated by top-down etching followed by epitaxial regrowth. The regrowth formed hexagonal sidewalls and pyramids on the nanopillars. The cathodoluminescence of MQWs blue shifts as the location moves from top to bottom on both the pillar sidewalls and pyramid facets, covering a spectral linewidth of about 100 nm. The MQWs on the pillar sidewalls have a higher InN fraction than those on the pyramid facets. The photoluminescent wavelength is stable over two orders of carrier density change due to the smaller quantum confined Stark effect on the nanopillar facets.

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

Measurement of laser quantum frequency fluctuations using a Pound-Drever stabilization system

We describe a method for measuring the frequency fluctuation spectrum of a laser oscillator, especially the weak noise contributions in the wings of the spectrum, and apply this method to confirm the existence of large excess quantum frequency fluctuations in a laser oscillator using an unstable optical resonator. Our measurement apparatus uses the Pound-Drever technique, which employs an RF phase modulator and a Fabry-Perot cavity to produce a sensitive high-speed frequency discrimination signal. We show that this signal can also be used to measure the quantum noise contributions to the frequency spectrum of a laser oscillator. Experimental measurements on a miniature diode-pumped Nd:YAG laser using a stable optical cavity closely match the predictions of the usual Schawlow-Townes theory, while the frequency fluctuations in a nearly identical laser employing an unstable optical resonator are approximately 1300 times larger. These much larger fluctuations arise in part from the larger output coupling and cavity bandwidth of the unstable cavity, but they also appear to confirm a predicted excess spontaneous emission factor (Petermann excess noise factor) of /spl ap/180 times arising from the nonorthogonal transverse mode properties of the unstable cavity. >

Electrically driven nanopyramid green light emitting diode

An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.

Cavity decay rate and relaxation oscillation frequency in unconventional laser cavities

Measuring the relaxation oscillation frequency /spl omega//sub r/ versus the normalized pumping rate r can provide a useful technique for determining either cavity or atomic parameters in many different kinds of lasers. Measurements of relaxation frequency versus pumping rate in a Nd:YAG laser using a gain-guided unstable-cavity design were recently found, however, to yield values of cavity decay rate which were unreasonably large compared to other estimates of the cavity losses. This difficulty has been resolved by a closer look at the relaxation oscillation dynamics in this type of laser. We find that in nonorthogonal laser cavities with nonuniform gain distributions the energy decay rate of the cavity oscillation mode usually employed in the relaxation frequency formula must be replaced by a different decay rate relevant to oscillation mode perturbations. A numerical simulation including this more general effect gives values very close to our experimental results, confirming the validity of this modified analysis. >

Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector

We demonstrate the output power enhancement of ultraviolet light-emitting diodes (UVLEDs) by epitaxial lateral over growth (ELOG) on a distributed Bragg reflector (DBR) patterned substrate. The patterned DBR mesas are used as ELOG masks to improve material quality as well as reflectors to enhance the light output coupling. Compared with the conventional UVLEDs, the surface pit density of UVLEDs at regions right above embedded patterned DBR were reduced from 2.5 × 106 to 1.6 × 106 cm-2. The improved light extraction efficiency is verified by ray tracing simulation. The luminous intensity of this novel structure is enhanced by 75% compared to that of reference UVLED structure at the wavelength 390 nm.

Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars

An enhanced stimulated emission was observed in optically pumped GaN nanopillars. The nanopillars were fabricated from an epitaxial wafer by patterned pillar etching followed by crystalline regrowth. Under optical excitation, a strong redshifted stimulated emission peak emerged from a broad spontaneous emission background. The emission is attributed to the electron-hole plasma gain at high carrier density. The emission slope efficiency was greatly enhanced by 20 times compared with a GaN substrate under the same pumping condition. The enhancement is attributed to the better photon and gain interaction from the multiple scattering of photons among nanopillars.