Zengqi Wang

A 2.4 GHz Ultra-Low-Power Current-Reuse CG-LNA With Active

An ultra-low-power common-gate low noise amplifier (CG-LNA) for 2.4 GHz wireless sensor network (WSN) applications is proposed in this letter. The current-reuse and active gm-boosting techniques are utilized. The analysis, design method and measurement results are shown. An implemented prototype using 0.18 μm CMOS technology is evaluated using on-wafer probing. Measurements also show a gain of 14.7 dB and an IIP3 of 2 dBm at 2.44 GHz. The measured noise figure is 4.8 dB at 2.44 GHz. S11 is below -18 dB from 2-3 GHz. The proposed LNA consumes 0.58 mW from 1.8 V dc supply.

{\rm G}_{\rm m}

A wideband 2-3 GHz three-stage low noise amplifier (LNA) featuring current reuse, cascaded L-match input network, and multiple gated transistors method (MGTR) is designed in 0.18-μm CMOS technology. The current-reused topology is adopted to fulfill low power consumption, meanwhile, high gain and low noise are obtained. The cascaded L-match input network is used to enhance the input matching bandwidth. The MGTR is utilized to improve the linearity performance. Post-layout simulated results present a maximum power gain of 28.7 dB, a good input matching across 1.8-6.5 GHz and a high third-order input intercept point (IIP3) of-10.4 dBm. A noise figure (NF) of 3.1-3.3 dB is achieved within 2-3 GHz with a power dissipation of 6.2 mA from a 3 V power supply.

-Boosting Technique

Abstract A wideband 2–3 GHz three-stage low noise amplifier (LNA) featuring current reuse, cascaded L-type input matching network (IMN), and optimized multiple gated transistors method (MGTR) using 0.18- μ m CMOS technology is presented in this paper. The current-reused topology is employed in the first two stages to reduce power consumption. For a wideband input matching, the common gate (CG) topology is adopted. Moreover, the cascaded L-type IMN composed of two single L-type networks cascaded in series is proposed for the first time. To improve the linearity performance, the optimized MGTR taking both transconductance g m and third-order nonlinear coefficient g m ″ into consideration is proposed and applied to the output stage. The proposed LNA presents a maximum power gain of 28.0 dB, an input matching across 1.8–5.8 GHz and a high third-order input intercept point (IIP 3 ) of −9.89 dBm. A noise figure (NF) of 3.1–3.5 dB is obtained in the required band with a power dissipation of 6.49 mA from a 3 V power supply.

A 2–3 GHz high gain and high linearity current-reused LNA with wideband input matching

Abstract A low voltage low power receiver supporting 780/868/915/2400 MHz ZigBee bands is presented in this paper. The receiver exploiting low-IF architecture consists of a RF-to-BB (baseband) current reuse front-end, a Gm-C based variable gain complex band-pass filter (CBPF) for image rejection and four stages of limiting amplifiers which saturate IF signal for demodulation. The proposed ZigBee receiver chip is implemented in TSMC 180 nm CMOS technology with metal-insulator-metal (MIM) capacitors. PCB measurement results show that the receiver has 45.9 dB conversion gain, 8.5 dB NF and −33.5 dBm out-of-band IIP3 at sub-GHz bands. When working in 2.4 GHz band, the gain is 38.4 dB, noise figure (NF) is 16.7 dB and the out-of-band IIP3 is −28.2 dBm. The S11 bandwidth (S11