Zhang Li

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poissons equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.

A power-efficient 12-bit analog-to-digital converter with a novel constant-resistance CMOS input sampling switch

A power-efficient 12-bit 40-MS/s pipeline analog-to-digital converter (ADC) implemented in a 0.13 μm CMOS technology is presented. A novel CMOS bootstrapping switch, which offers a constant on-resistance over the entire input signal range, is used at the sample-and-hold front-end to enhance the dynamic performance of the pipelined ADC. By implementing with 2.5-bit-per-stage and a simplified amplifier sharing architecture between two successive pipeline stages, a very competitive power consumption and small die area can be achieved. Meanwhile, the substrate-biasing-effect attenuated T-type switches are introduced to reduce the crosstalk between the two opamp sharing successive stages. Moreover, a two-stage gain boosted recycling folded cascode (RFC) amplifier with hybrid frequency compensation is developed to further reduce the power consumption and maintain the ADCs performance simultaneously. The measured results imply that the ADC achieves a spurious-free dynamic range (SFDR) of 75.7 dB and a signal-to-noise-plus-distortion ratio (SNDR) of 62.74 dB with a 4.3 MHz input signal; the SNDR maintains over 58.25 dB for input signals up to 19.3MHz. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are −0.43 to +0.48 LSB and −1.62 to +1.89 LSB respectively. The prototype ADC consumes 28.4 mW under a 1.2-V nominal power supply and 40 MHz sampling rate, transferring to a figure-of-merit (FOM) of 0.63 pJ per conversion-step.

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Based on the quasi-two-dimensional (2D) solution of Poissons equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

An I/Q DAC with gain matching circuit for a wireless transmitter

This paper presents a two-channel 12-bit current-steering digital-to-analog converter (DAC) for I and Q signal paths in a wireless transmitter. The proposed DAC has a full-scale output current with an adjusting range of 2 to 10 mA. A gain matching circuit is proposed to reduce gain mismatch between the I and Q channels. The tuning range is ±24% of full scale and the minimum resolution is 1/16 LSB. To further improve its dynamic performance, the switch driver and current cell are optimized to minimize glitch energy. The chip has been processed in a standard 0.13 μm CMOS technology. Gain mismatch between a I-channel DAC and a Q-channel DAC is measured to be approximately 0.13%. At 120-MSPS sample rate for 1 MHz sinusoidal signal, the spurious free dynamic range (SFDR) is 75 dB. The total power dissipation is 62 mW and has an active area of 1.08 mm2.

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poissons equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal—oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.