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Alsmeier Johann

Infineon Technologies

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Publication

Featured researches published by Alsmeier Johann.

Archive | 2003

Halbleiterspeicherzelle mit einem Graben und einem planaren Auswahltransistor und Verfahren zu ihrer Herstellung

Alsmeier Johann

Archive | 2001

Grabenkondensator einer DRAM-Speicherzelle mit metallischem Collarbereich und nicht-metallischer Leitungsbrücke zum Auswahltransistor

Sell Bernhard; Saenger Annette; Gutsche Martin; Seidl Harald; Alsmeier Johann

Archive | 2002

Integrated anti-fuse structure used in an integrated semiconductor storage device comprises a dielectric layer, conducting contact layers and aluminum layers bordering the dielectric layer

Alsmeier Johann; Lehr Matthias Uwe

Archive | 2004

Dynamische Speicherzelle und Verfahren zum Herstellen derselben

Gustin Wolfgang; Alsmeier Johann

Archive | 2003

Verfahren mit verbesserter Kontrollierbarkeit einer vergrabenen Schicht

Bergner Wolfgang; Alsmeier Johann

Archive | 2003

Dynamic memory cell

Alsmeier Johann; Gustin Wolfgang

Archive | 2006

Trench capacitor of a DEAM memory cell with metallic collar region and nonmetallic buried strap to the select transistor

Alsmeier Johann; Gutsche Martin; Sell Bernhard; Saenger Annette; Seidl Harald

Archive | 2006

DRAM-Zelle mit Graben-Kondensator und vertikalem Transistor

Alsmeier Johann

Archive | 2003

Production of a p-channel field effect transistor on a semiconductor substrate comprises doping the substrate with donators to form an n-doped sink, thermally oxidizing to form a thin oxide layer on the substrate, and further processing

Faul Juergen; Alsmeier Johann

Archive | 2000

Improved controllability of a buried device layer

Bergner Wolfgang; Alsmeier Johann

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Bergner Wolfgang

Infineon Technologies

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Gustin Wolfgang

Infineon Technologies

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Gutsche Martin

Infineon Technologies

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Saenger Annette

Infineon Technologies

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Seidl Harald

Infineon Technologies

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Sell Bernhard

Siemens

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Faul Juergen

Infineon Technologies

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Lehr Matthias Uwe

Infineon Technologies

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