Amaury Gendron
Freescale Semiconductor
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Publication
Featured researches published by Amaury Gendron.
IEEE Transactions on Device and Materials Reliability | 2006
Christophe Salamero; Nicolas Nolhier; Amaury Gendron; Marise Bafleur; Patrice Besse; Michel Zecri
This paper presents a new method to predict the electrostatic-discharge (ESD) protection robustness of a device with technology-in-computer-aided-design (TCAD) simulations. Tested on different devices and two Smart Power technologies, the results are validated through electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion
bipolar/bicmos circuits and technology meeting | 2007
Philippe Renaud; Amaury Gendron; Marise Bafleur; Nicolas Nolhier
A new device dedicated to the ESD protection of high voltage I/Os is presented. In addition to the use of specific design guidelines, the concept consists in coupling an open-base lateral PNP with a vertical avalanche diode within the same structure to obtain a non-snapback behavior together with very good Ron capabilities (~1Omega). The protection of high voltage I/Os with a narrow ESD design window ranging from 80 V to 100 V can be implemented in a reduced surface of 151*140 mum2, which represents a state-of-the-art breakthrough.
bipolar/bicmos circuits and technology meeting | 2010
Antoine Delmas; Amaury Gendron; Marise Bafleur; Nicolas Nolhier; C. Gill
Transient voltage overshoots of a high voltage (20 V) ESD clamp based on bipolar transistors in a smart power technology are studied using different TLP pulse conditions (rise time, voltage amplitude). The physical mechanisms involved during the ESD clamp turn-on are thoroughly analyzed by the mean of TCAD simulations, allowing the definition of a set of design guidelines for the overshoot reduction.
international reliability physics symposium | 2008
A. Goyal; James D. Whitfield; Changsoo Hong; Chai Ean Gill; C. Rouying Zhan; V. Kushner; Amaury Gendron; S. Contractor
We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a zener across the gate and source which prevents the observed voltage build up at the gate of the LDMOS.
bipolar/bicmos circuits and technology meeting | 2006
Amaury Gendron; C. Salamero; Nicolas Nolhier; Marise Bafleur; Philippe Renaud; Patrice Besse
An innovative self-biased NPN transistor dedicated to the ESD protection of high voltage I/Os is presented. To fulfil a high clamping voltage / low on-state resistance specification, the authors have taken benefit of specific technology features, as deep insulation trenches, low-doped epitaxy and high-doped buried layer. First, the guidelines allowing the increase of the clamping voltage and the lowering of the on-state resistance are defined, based on an accurate description of the physical mechanisms involved during an ESD stress. Then, the proposed NPN transistor is described, and the results of measurements and TCAD simulations are presented. Excellent capabilities as 40 Volt clamping voltage, zero on-state resistance and It2 higher than 5 Ampere have been achieved
international symposium on power semiconductor devices and ic's | 2011
Amaury Gendron; Chai Ean Gill; Craig M. Aykroyd; Carol Zhan
This paper presents several techniques to improve ESD robustness for high voltage IO designs in automotive applications. SCR-based ESD clamps designed on isolated wells can generate high level of substrate injection during ESD events, causing false triggering and irreversible failures of internal components. To mitigate substrate injection effects, we have defined design strategies leading to a set of designs rules for proper integration with ESD clamps.
electrical overstress electrostatic discharge symposium | 2011
Amaury Gendron; Chai Ean Gill; Carol Zhan; Mike Kaneshiro; Bill Cowden; Changsoo Hong; Richard Ida; Dung Nguyen
Archive | 2010
Amaury Gendron; Chai Ean Gill; Rouying Zhan
electrical overstress/electrostatic discharge symposium | 2006
Amaury Gendron; Christophe Salamero; Marise Bafleur; N. Nolhier; Philippe Renaud; Patrice Besse
Archive | 2013
Amaury Gendron; Chai Ean Gill; Vadim A. Kushner; Rouying Zhan