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Publication
Featured researches published by Ananda Hosakere Kumar.
electronic components and technology conference | 1993
Sudipta K. Ray; Daniel George Berger; George Czornyj; Ananda Hosakere Kumar; Rao R. Tummala
This paper describes a fabrication method for multilevel, thin film wiring in which each wiring level and a solid via or stud to the level below, are formed as one integral unit. The processing scheme described makes use of a photosensitive polyimide (PSPI) for defining the wiring channels and a non-photosensitive polyimide for the vias. The via opening in the non-photosensitive polyimide is formed by laser ablation while the wiring channels are formed in the PSPI layer by photolithography. The via hole and the channels in the PSPI are filled in the same metallization step consisting of electroplating copper over a sputtered seed layer. The wiring pattern is finally delineated when a planarization step removes the excess plated copper. This processing method, which we refer to as the Dual Layer Metallization (DLM) method, is found to be very economical, in terms of the number of process steps involved, for forming multilevel, polyimide-copper wiring structures.<<ETX>>
Archive | 1997
C. P. Wong; D. B. Clegg; Ananda Hosakere Kumar; K. Otsuka; Berhan Ozmat
The packaging is defined as interconnecting, powering, cooling, and protecting integrated circuits. This chapter addresses the protection of semiconductor devices by means of sealing and encapsulation processes after the device packaging is completed. In addition to providing protection of devices, sealing and encapsulation must also protect the package and its package wiring so as to provide the required reliability of the packaged devices. Figure 14-1 illustrates the basic concepts of sealing and encapsulation.
electronic components and technology conference | 1993
Ananda Hosakere Kumar
This paper describes a novel method for densifying the surfaces of external, thick film molybdenum circuit features of multilayer ceramic substrates using palladium as a sintering catalyst. Such dense sintering of the surface effectively prevents the formation of undesirable pools of glass on the surfaces of the external features, making it possible to perform contact-probe electrical testing prior to plating and to nickel plate the molybdenum features without the customary cleaning steps needed to clear the pools of glass.<<ETX>>
Archive | 1991
Umar M. Ahmad; Daniel George Berger; Ananda Hosakere Kumar; Susan Jarvis Lamaire; Keshav Prasad; Sudipta K. Ray; Kwong Hon Wong
Archive | 1978
Ananda Hosakere Kumar; Peter W. McMillan; Rao R. Tummala
Archive | 1992
Kenneth Chang; George Czornyj; Mukta S. Farooq; Ananda Hosakere Kumar; Marvin S. Pitler; Heinz O. Steimel
Archive | 1988
David William Boss; Timothy William Carr; Derry Jay Dubetsky; George Martin Greenstein; Warren David Grobman; Carl Peter Hayunga; Ananda Hosakere Kumar; Walter Frederick Lange; Robert Henry Massey; Paul Harry Palmateer; John Anthony Romano; Da-Yuan Shih
Archive | 1993
Umar M. Ahmad; Ananda Hosakere Kumar; Eric D. Perfecto; Chandrika Prasad; Sampath Purushothaman; Sudipta K. Ray
Archive | 1991
Nanik Bakhru; Richard A. Bates; George Czornyj; Nunzio DiPaolo; Ananda Hosakere Kumar; Suryanarayana Mukkavilli; Heinz O. Steimel; Rao R. Tummala
Archive | 1985
Lester Wynn Herron; Ananda Hosakere Kumar; Raj Navinchandra Master; Robert Wolff Nufer