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Atsushi Hatakeyama

Fujitsu

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Publication

Featured researches published by Atsushi Hatakeyama.

international solid-state circuits conference | 1997

A 256 Mb SDRAM using a register-controlled digital DLL

Atsushi Hatakeyama; Hirohiko Mochizuki; Tadao Aikawa; Masato Takita; Yuki Ishii; Hironobu Tsuboi; Shinya Fujioka; Shusaku Yamaguchi; Makoto Koga; Yuji Serizawa; Koichi Nishimura; Kuninori Kawabata; Yoshinori Okajima; Michiari Kawano; Hideyuki Kojima; Kazuhiro Mizutani; Toru Anezaki; Masatomo Hasegawa; Masao Taguchi

This 256 Mb synchronous DRAM with 1 ns clock access is stable against temperature, voltage, and process variation by use of an innovative register-controlled delay locked loop (RDLL). Unlike most conventional high-density DRAMs, the bit-lines are placed above the storage capacitors in this DRAM to relax design rules of the core area. The noise issues are analyzed and resolved to help implement the technology in mass production of 0.28 to 0.24 /spl mu/m 200 MHz DRAMs.

Archive | 1994

Semiconductor device having a plurality of chips having identical circuit arrangement sealed in package

Atsushi Hatakeyama; Fumio Baba; Junichi Kasai; Mitsutaka Sato

Archive | 1996

Semiconductor memory for increasing the number of half good memories by selecting and using good memory blocks

Shinya Fujioka; Atsushi Hatakeyama; Hirohiko Mochizuki

Archive | 1998

Semiconductor device and semiconductor system for high-speed data transfer

Yoshihiro Takemae; Masao Taguchi; Masao Nakano; Takaaki Suzuki; Hiroyoshi Tomita; Toshiya Uchida; Yasuharu Sato; Atsushi Hatakeyama; Masato Matsumiya; Yasurou Matsuzaki

Archive | 1997

Semiconductor device and a semiconductor memory device

Kuninori Kawabata; Atsushi Hatakeyama

Archive | 1997

System configured of synchronous semiconductor device for adjusting timing of each input and semiconductor device used therefor

Yoshihiro Takemae; Masao Taguchi; Yasurou Matsuzaki; Hiroyoshi Tomita; Hirohiko Mochizuki; Atsushi Hatakeyama; Yoshinori Okajima; Masao Nakano

Archive | 1991

Semiconductor memory device having a boost circuit

Atsushi Hatakeyama; Masao Nakano

Archive | 2000

Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier

Kaoru Mori; Ayako Kitamoto; Masato Matsumiya; Masato Takita; Shinichi Yamada; Koichi Nishimura; Atsushi Hatakeyama

Archive | 1999

MEMORY DEVICE HAVING SENSE AMPLIFIER OF OVER-DRIVE SYSTEM

Atsushi Hatakeyama; Koichi Nishimura; 淳 畠山; 幸一 西村

Archive | 1997

Semiconductor memory device having a single line data bus and latch circuits for improved pipeline operations

Shusaku Yamaguchi; Atsushi Hatakeyama; Masato Takita; Tadao Aikawa; Hirohiko Mochizuki

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Hirohiko Mochizuki

Fujitsu

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Koichi Nishimura

Fujitsu

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Masao Nakano

Fujitsu

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Masato Takita

Fujitsu

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Shusaku Yamaguchi

Fujitsu

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Masato Matsumiya

Fujitsu

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Tadao Aikawa

Fujitsu

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Ayako Kitamoto

Fujitsu

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Kaoru Mori

Fujitsu

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Kuninori Kawabata

Fujitsu

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