Aurélien Larie

A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE

This paper presents the design of a broadband power amplifier (PA) in 130-nm SiGe BiCMOS technology. First, a single-stage broadband single-cell PA covering the 4.5-18-GHz frequency band is introduced. In this frequency range, this single cell achieves a measured gain, saturated output power ( Psat), output 1-dB compression point ( P1dB), and power-added efficiency (PAE) in the range from 12.8 to 15.7 dB, 18.8 to 23.7 dBm, 16.7 to 19.5 dBm, and 11.4 to 31.9%, respectively. Its peak saturated output power and maximum PAE are both obtained at 8.5 GHz. Second, to increase the output power, a PA consisting of two parallel broadband cells with a power combination is presented. This PA operates in the 4.5-15.5-GHz frequency range with measured gain, Psat, P1dB, and PAE in the range from 11 to 16.6 dB, 21.3 to 25.5 dBm, 18.7 to 21.7 dBm, and 11.9 to 28.7%, respectively. It achieves its peak saturated output power of 25.5 dBm at 8.5 GHz and its maximum PAE of 28.7% with an associated output power of 23.6 dBm at 6.5 GHz. Each of those two PAs achieves better performances than the state-of-the-art in broadband SiGe technology when comparing the output power level and efficiency.

A highly linear bidirectional phase shifter based on vector modulator for 60GHz applications

This paper presents a phase shifter for beam steered systems at mmW frequencies. It is based on an I/Q hybrid transformer feeding a vector modulator that weights the amplitude of quadrature differential signals. A specific passive attenuator has been designed to improve the attenuation depth, the phase accuracy and the impedance matching. A CMOS 55nm circuit was measured, that covers the 360° phase shift with less than 1 dB gain and 5° phase imbalance. It covers the frequency band from 55 to 67 GHz and paves the way towards mobile millimeter-wave high data rate telecommunication systems.

60GHz highly reliable power amplifier with 13dBm P sat 15% peak PAE in 65nm CMOS technology

A 60 GHz highly reliable single-ended two-stage Power Amplifier (PA) is fabricated for the Wireless Personal Area Network (WPAN) applications. The PA consists of a cascode power stage to reduce voltage drop and improving long-term reliability, and a common source driver stage. Output, inter-stage and input impedance matching networks are implemented with distributed elements (microstrip and slow-wave transmission lines). The PA achieves a saturated output power (Psat) of 13dBm and a maximum Power Added Efficiency (PAEmax) of 15% with 13dB gain. It consumes only 84mW and occupies 0.4mm2 of die area.

Dual-mode power amplifier module with in-band reconfigurable output power for multifunctional radar and radio communication systems

This paper presents a concept of dual-mode power amplifier (PA) module with in-band reconfigurable gain and output power. In the first mode, a wideband PA delivers a medium output power. This operational mode is particularly appropriate for ultra-wideband or multi-standard radio communication. In the second mode, a high power amplifier is turned on in order to deliver a high power signal within a sub-band for enhanced radar operation. This second mode allows both amplifiers to operate simultaneously in order to provide continuous service in sidebands. To demonstrate this concept, a network integrating a wideband medium output power PA and a narrowband high power PA is proposed. Both PA are based on low cost SiGe technology and optimized for maximum output power and Power Added Efficiency (PAE) in their operating frequency range. Simulated and measured results of a Printed Circuit Board (PCB) demonstrator validate the concept. The proposed sub-system would be of a great interest for multifunctional radar and radio communication systems.