B. Vandelle

0.13μm SiGe BiCMOS technology for mm-wave applications

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity

This paper summarizes the work carried out to improve performances of a SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. A 300 GHz f/sub max/ is reported for a transistor sustaining high thermal budget.

A self-aligned vertical HBT for thin SOI SiGeC BiCMOS

We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13/spl mu/m SOI CMOS technology. Static and dynamic transistor characteristics are described and compared with simulation results and bulk device performances.

SiGe HBTs featuring f T ≫400GHz at room temperature

This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak fT values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.

Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI

This paper presents a comprehensive experimental study of the static and dynamic characteristics of self-aligned vertical SiGeC HBTs fabricated on CMOS compatible, thin film SOI substrates. In particular, the influence of collector doping and layout on the performance of fully-depleted transistors is described in details. The potentiality of partially-depleted SOI HBTs for high speed applications is also demonstrated, with cut-off frequencies f/sub T/= 102GHz and f/sub MAX/= 154GHz reported here for the first time.

250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record fT and fmax (>250 GHz)

Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs

This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurements and simulations. The results show that the DTI has a significant influence on heat dissipation and on the thermal resistance values but only little impact on RF performances.

SiGe HBT design for CMOS compatible SOI

In this paper, we review the process and layout optimization of thin-film (150nm) SOI SiGe HBTs covering a wide range of f_T-BV_ceo tradeoffs, i.e. from ~150GHz f_T to ~8V BV_ceo. We have shown that a SiGe HBT with bulk-like f_T-BV_ceo trade-off can be built on a CMOS compatible SOI substrate. This HBT can be modularly integrated at low cost (4 masks, < 30 steps) in a 0.13 mum SOI CMOS process (Boissonnet et al.). Anticipated applications range from wireless to high-speed analog circuitry

Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology

This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.

Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies

In this paper we review a bit more than 10 years of SiGe BiCMOS technology development and present the best results published to date by the main contenders in the field. Next, with the support of recent results obtained at STMicroelectronics, we discuss the process optimization that led to further increase in the device operating speed. Finally, we present the characteristics of a 260GHz fT, 340GHz fmax SiGe HBT technology along with recent circuit results demonstrated in this technology.