Bahar M. Motlagh

Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS technology

This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency ports

40 and 60 GHz frequency doublers in 90-nm CMOS

The design and characterization of both a 40 GHz and a 60 GHz frequency doublers in 90-nm CMOS technology is presented. Conversion loss of 15.8 dB at 40 GHz output frequency with 3 dBm input power and 15.3 dB at 60 GHz with 5 dBm input power was achieved for the two frequency doublers. The power consumption was about 4 mW for both designs.

CMOS MMICs for microwave and millimeter wave applications

Recent results on MMIC based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on EM-simulations, models for multilayer capacitances, MIM-capacitances, various transmission lines etc were also developed. Amplifiers, frequency mixers, and frequency multipliers were then designed, fabricated and characterized. Amplifiers with a gain of 6 and 3.5 dB per stage at 20 and 40 GHz respectively, were demonstrated as well as frequency multipliers from 20 to 40 GHz with 15.8 dB conversion loss, and 30 to 60 GHz multipliers with 15.3 dB conversion loss. Resistive mixers at 20, 40, and 60 GHz were also demonstrated with promising results.

Monolithically Integrated 200-GHz Double-Slot Antenna and Resistive Mixers in a GaAs-mHEMT MMIC Process

This paper presents the design and characterization of two resistive mixers integrated with a double-slot antenna in a 100-nm GaAs mHEMT technology. With RF frequency varying from 185 to 202 GHz, a typical conversion loss (L c) of 8.0 dB is measured for the single-ended mixer and a typical L c of 12.2 dB is obtained from one of the two IF outputs for the single-balanced mixer. Each mixer is integrated with a double-slot antenna and mounted on an Si lens. Incorporating the antenna gain and the conversion loss of the mixer, a typical receiver gain of 15.4 dB is achieved for the integrated antenna with single-ended mixer, and a typical receiver gain of 11.2 dB is obtained for the integrated antenna with single-balanced mixer by measuring one of the two IF outputs. In this paper, a novel method is also proposed and proved to evaluate a moderate to high noise figure (NF) device in millimeter/sub millimeter frequency band. The result shows that the single-ended mixer in this paper has an NF around 1.0 dB higher compared to its Lc, and the single-balanced one has an NF about 1.6 dB higher than its Lc at room-temperature operation.

CMOS devices and circuits for microwave and millimeter wave applications

Recent results on characterization, modelling and circuit design based on 90/130 nm CMOS is presented in this paper. Amplifiers, frequency multipliers, and mixers were realized for frequencies up to 60 GHz. Circuit results based on two different transmission line approaches are reported. Load-pull characterization of transistors at 9 GHz and 23 GHz are also reported with 250mW/mm and 150 mW/mm output power for a 90 nm and 130 nm CMOS technology respectively. Initial studies of FINFETs promise feasibility of analogue circuits up to millimetre wave frequencies.