Been-Jon Woo

Process for fabricating a flash EPROM having reduced cell size

Method of fabricating a MOSFET with graded source and drain regions

Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps

Erase performance improvement via dual floating gate processing

Source drain doping technique

Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions

Silicidation method for contactless EPROM related devices

Tungsten-silicide reoxidation process including annealing in pure nitrogen and subsequent oxidation in oxygen

Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth

Tungsten-silicide reoxidation technique using a CVD oxide cap