Beth Ann Rainey
IBM
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Publication
Featured researches published by Beth Ann Rainey.
international electron devices meeting | 2002
Edward J. Nowak; Beth Ann Rainey; David M. Fried; J. Kedzierski; Meikei Ieong; W. Leipold; J. Wright; M. Breitwisch
An operational six-transistor SRAM cell is experimentally demonstrated using Double Gate CMOS FinFET technology. A cell size of 4.8 /spl mu/m/sup 2/ was achieved in 180 nm node technology, with stable operation at 1.5 V using a single level of copper interconnect. To our knowledge this represents the first experimental demonstration of a fully integrated FinFET SRAM Cell.
Archive | 2003
David M. Fried; Edward J. Nowak; Beth Ann Rainey; Devendra K. Sadana
Archive | 2003
Ingo Dr Aller; Joachim Keinert; Thomas Ludwig; Edward J. Nowak; Beth Ann Rainey
Archive | 2002
Jeffrey S. Brown; David M. Fried; Edward J. Nowak; Beth Ann Rainey
Archive | 2002
David M. Fried; Edward J. Nowak; Beth Ann Rainey
Archive | 2005
Peter J. Geiss; Marwan H. Khater; Qizhi Liu; Randy W. Mann; Robert J. Purtell; Beth Ann Rainey; Jae Sung Rieh; Andreas D. Stricker
Archive | 2004
Thomas N. Adam; Kevin K. Chan; Alvin J. Joseph; Marwan H. Khater; Qizhi Liu; Beth Ann Rainey; Kathryn T. Schonenberg
Archive | 2002
David M. Fried; Edward J. Nowak; Beth Ann Rainey
Archive | 2007
Brent A. Anderson; Matthew J. Breitwisch; Edward J. Nowak; Beth Ann Rainey
Archive | 2004
Beth Ann Rainey; Edward J. Nowak; Ingo Dr Aller; Joachim Keinert; Thomas Ludwig
