Bo-Geun Kim
Samsung
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Publication
Featured researches published by Bo-Geun Kim.
international solid-state circuits conference | 2011
Kitae Park; Oh-Suk Kwon; Sangyong Yoon; Myung-Hoon Choi; In-Mo Kim; Bo-Geun Kim; Minseok S. Kim; Yoon-Hee Choi; Seung-Hwan Shin; Youngson Song; Joo-Yong Park; Jae-Eun Lee; Changgyu Eun; Ho-Chul Lee; Hyeong-Jun Kim; J.Y. Lee; Jong-Young Kim; Tae-Min Kweon; Hyun-Jun Yoon; Tae-hyun Kim; Dongkyo Shim; Jong-Sun Sel; Ji-Yeon Shin; Pan-Suk Kwak; Jinman Han; Keon-Soo Kim; Sung-Soo Lee; Young-Ho Lim; Tae-Sung Jung
Recently, the demand for 3b/cell NAND flash has been increasing due to a strong market shift from 2b/cell to 3b/cell in NAND flash applications, such as USB disk drives, memory cards, MP3 players and digital still cameras that require cost-effective flash memory. To further expand the 3b/cell market, high write and read performances are essential [1]. Moreover, the device reliability requirements for these applications is a challenge due to continuing NAND scaling to sub-30nm pitches that increases cell-to-cell interference and disturbance. We present a high reliability 64Gb 3b/cell NAND flash with 7MB/s write rate and 200Mb/s asynchronous DDR interface in a 20m-node technology that helps to meet the expanding market demand and application requirement.
Archive | 2012
Sangyong Yoon; Bo-Geun Kim; Seung-Hwan Shin
Archive | 2013
Yoon-Hee Choi; Bo-Geun Kim
Archive | 2013
Bo-Geun Kim
Archive | 2014
Youngsun Song; Bo-Geun Kim; Oh-Suk Kwon; Kitae Park; Seung-Hwan Shin; Sangyong Yoon
Archive | 2013
Eun-Jin Yun; Bo-Geun Kim
Archive | 2005
Bo-Geun Kim; Seung-Keun Lee
Archive | 2008
Bo-Geun Kim; Heung-Soo Lim; Jae-Woo Im
Archive | 2005
Bo-Geun Kim; Heung-Soo Lim; Jae-Woo Lim
Archive | 2005
Bo-Geun Kim; Seung-Keun Lee
