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Dive into the research topics where Byong-man Kim is active.

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Featured researches published by Byong-man Kim.


Applied Physics Letters | 2000

Local modification of the thin YBa2Cu3O7−y microstrips by the voltage-biased atomic force microscope tip

Byong-man Kim; In-Sang Song; Junghyun Sok; In-Yong Song; Yo-Sep Min; Myeong-Suk Kim; J. W. Lee

The atomic force microscope (AFM) tip biased at around −15 V is found to be capable of locally modifying the entire thickness of 40-nm-thick semiconducting or superconducting YBa2Cu3O7−y microstrips in air. We show, using combined electrical and AFM measurements, that the local regions underneath the surface of the semiconducting or superconducting YBa2Cu3O7−y microstrips are transformed into either nonconducting or nonsuperconducting regions, respectively, upon applying the negatively biased AFM tip. The conductance of the nonsuperconducting regions is also found to be comparable to that of the superconducting regions before modification at 298 K.


Applied Physics Letters | 1999

High-Tc edge junctions with a Ga-doped YBa2Cu3O7−δ barrier and interface resistances

In-Yong Song; Eun-Hye Lee; Byong-man Kim; Insang Song; Gyeong-Su Park

High-Tc ramp-edge junctions with a Ga-doped YBa2Cu3O7−δ barrier have been fabricated in the trilayer geometry of YBa2Cu3O7−δ/YBa2Cu2.79Ga0.21O7−δ/YBa2Cu3O7−δ on LaAlO3 single crystals. Interface resistances of the junctions were drastically reduced by using an in situ Ar plasma cleaning treatment. The Ga-doped YBa2Cu3O7−δ junctions with barrier thickness of 200 and 300 A clearly exhibited resistively-shunted-junction-like current–voltage characteristics. The critical currents of the Ga-doped junctions were less sensitive to the variation of the barrier thickness compared to those of the other junctions. The increase of the barrier resistivity by Ga-doping and the in situ rf plasma cleaning treatment resulted in an enhancement of the junction reliability and reproducibility.


Physica C-superconductivity and Its Applications | 1999

Self-radiation and sensing of microwave using a Josephson junction coupled to a frequency-independent antenna

Insang Song; Byong-man Kim; Gwangseo Park

A single Josephson junction (JJ) coupled to a broadband planar antenna was fabricated and its microwave properties were tested at 22 GHz. Sensitivity for the detection of self-radiation power or the reception of microwave power of the JJ coupled to the antenna increased by more than one order of magnitude in comparison to that of the JJ without the antenna. These results demonstrate that the antenna incorporation significantly enhances the convergence of electromagnetic energy between JJ and free space.


Archive | 2000

Multi-value single electron memory using double-quantum dot and driving method thereof

Jo-won Lee; Byong-man Kim; Moon-kyung Kim


Archive | 2001

Rewritable data storage using carbonaceous material and writing/reading method thereof

Byong-man Kim; Yo-Sep Min; Jo-won Lee; Nae-Sung Lee


Archive | 2002

Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same

Soo-doo Chae; Byong-man Kim; Moonkyung Kim; Hee-soon Chae; Won-il Ryu


Archive | 2004

Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same

In-kyeong Yoo; Byong-man Kim


Archive | 2004

Memory device including a transistor having functions of RAM and ROM

In-kyeong Yoo; Byong-man Kim


Archive | 2000

MNOS-type memory using single electron transistor and driving method thereof

Jo-won Lee; Moon-kyung Kim; Byong-man Kim; Seok-yeol Yoon; Hyung-lae Roh


Archive | 2003

Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element

Soo-doo Chae; Byong-man Kim; Moon-kyung Kim; Hee-soon Chae; Won-il Ryu

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