Won-il Ryu

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

70 nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells with an ultra-thin oxide-nitride-oxide (ONO) film on an silicon-on-insulator (SOI) wafer are fabricated. If we consider the program/erase threshold voltage window as 2 V, the program time is approximately 1 ms at an 8 V program voltage and the erase time is about 200 us at a -6 V erase voltage using FN write and the 2-sided hot hole injection method. It is observed that the 2-sided hot hole injection can completely erase the electrons in the ONO thin film on a 70 nm channel. The memory window is almost constant after 100,000 cycles, and the retention characteristics show that the threshold voltage after 106 s is predicted as 0.75 V by extrapolation.