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Dive into the research topics where C. Michael Garner is active.

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Featured researches published by C. Michael Garner.


FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011 | 2011

Metrology and Characterization Challenges for Emerging Research Materials and Devices

C. Michael Garner; Daniel J. C. Herr; Yaw S. Obeng

The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance.


CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology | 2007

Metrology For Emerging Research Materials And Devices

C. Michael Garner; Dan Herr

The International Technology Roadmap for Semiconductors (ITRS) [1] identifies a number of potentially enabling device and materials technologies to extend and compliment CMOS. These emerging memory and logic devices employ alternate “states” including 1D charge state, molecular state, polarization, material phase, and spin. The improvement of these materials and devices depends on utilizing existing and new metrology methods to characterize their structure, composition and emerging critical properties at the nanometer scale. The metrology required to characterize nanomaterials, interfaces, and device structures will include existing structural metrology, such as TEM, SEM, and others, as well as metrology to characterize new “state” properties of the materials. The characterization of properties and correlations to nanostructure and composition are critical for these new devices and materials. Characterizing the properties of emerging logic technologies will be very difficult, as an applied stimulus is req...


Archive | 2003

Self-aligned coaxial via capacitors

Kishore K. Chakravorty; Thomas S. Dory; C. Michael Garner


Archive | 2004

Nano-sized metals and alloys, and methods of assembling packages containing same

Fay Hua; C. Michael Garner


2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics | 2009

Frontiers of Characterization and Metrology for Nanoelectronics: 2009

Erik M. Secula; David G. Seiler; Rajinder P. Khosla; Daniel J. C. Herr; C. Michael Garner; Robert McDonald; Alain C. Diebold


Archive | 2010

MAGNETIC PHASE CHANGE LOGIC

C. Michael Garner; Dmitri E. Nikonov


Archive | 2002

ELECTRONIC ASSEMBLY INCLUDING A DIE HAVING AN INTEGRATED CIRCUIT AND A LAYER OF DIAMOND AND METHODS OF PRODUCING THE SAME

Gregory M. Chrysler; Abhay A. Watwe; Sairam Agraharam; Kramadhati V. Ravi; C. Michael Garner


AIP Conference Proceedings | 2009

Front Matter for Volume 1173

Erik M. Secula; David G. Seiler; Rajinder P. Khosla; Dan Herr; C. Michael Garner; Robert McDonald; Alain C. Diebold


AIP Conference Proceedings | 2009

Back Matter for Volume 1173

Erik M. Secula; David G. Seiler; Rajinder P. Khosla; Dan Herr; C. Michael Garner; Robert McDonald; Alain C. Diebold


Archive | 2008

A wafer and a die having an integrated circuit and a layer of diamond

Gregory M. Chrysler; Abhay A. Watwe; Sairam Agraharam; Kramadhati V. Ravi; C. Michael Garner

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Alain C. Diebold

State University of New York System

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David G. Seiler

National Institute of Standards and Technology

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Daniel J. C. Herr

Semiconductor Research Corporation

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