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Featured researches published by Chang Moon Lim.


Advances in resist technology and processing. Conference | 2005

Top antireflective coating process for immersion lithography

Jae Chang Jung; Sung Koo Lee; Keun Do Ban; Seo Min Kim; Cheol-Kyu Bok; Chang Moon Lim; Seung Chan Moon

To accomplish minimizing feature size to sub 60nm, new light sources for photolithography are emerging, such as F2(157nm), and EUV(13nm). However, these new lithographic technologies have many problems to be solved for real device production. In case of F2 lithography, pellicle issue makes it difficult to use of F2 source in mass production. In case of EUV, light source and mask fabrication issues must be solved for real device application. For these reasons, instead of new light sources, extension of dry ArF lithography has been studied for sub 70nm device production by using Resolution Enhancement Technology (RET) such as using high NA tools, off axis illumination, and phase shift mask. Recently, a new technology called ArF immersion lithography is emerging as a next generation lithography. The first problem of this technology is contamination issues that come from the dissolution of contaminants from the photoresist to the immersion liquid. The second is optical problem that comes from the using hyper NA system. To solve these two problems, we have developed top antireflective coating (TARC) material. This TARC material can be coated on resist without damage to the resist property. In addition to, this TARC material is easily developable by conventional 2.38 wt% TMAH solution. The reflective index of this TARC is adjusted to 1.55, so it can act as an antireflective material. To this TARC material for immersion, quencher gradient resist process (QGRP) was applied also. As a result, we could improve resolution and process margin. However, some of resists showed defects that were generated by this TARC material and QGRP. To solve this defect problem, we introduced buffer function to the TARC material. Thanks to this buffer function, we could minimize defects of resist pattern in immersion lithography.


Proceedings of SPIE, the International Society for Optical Engineering | 2006

Heterogeneous diffusion model for simulation of resist process

Chang Moon Lim; Jun Taek Park; Seo Min Kim; Hyeong Soo Kim; Seung Chan Moon

There have been imposed quite incompatible requirements on lithographic simulation tool for OPC, that is it should be enough accurate and enough fast. Though diffused aerial image model (DAIM) has achieved these goals successfully, rapid transition of lithography into very low k1 and sub-resolution regime makes it very difficult to meet these goals without loss of any of speed or accuracy. In this paper we suggested new modeling method of resist process which is called heterogeneous diffusion of aerial image. First, various examples of CD discrepancy between experiment and simulation with DAIM are suggested. Then the theoretical background of new model is explained and finally CD prediction performance of new model is demonstrated in 60nm 0.29k1 patterning of real DRAM devices. Improved CD prediction capability of new model is observed in various critical patterning of DRAM.


Optical Microlithography XVI | 2003

Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM

Tae-Seung Eom; Chang Moon Lim; Seo-Min Kim; Hee-Bom Kim; Seyoung Oh; Won-Kwang Ma; Seung-Chan Moon; Ki Soo Shin

The purpose of this paper is to do the direct comparison of between the novel chrome-less phase shift mask (CLM), which is suggest by Chen et. al. recently, and attenuated phase shift mask which has been in the main stream of DRAM lithography. Our study is focused on the question of whether the CLM technology has a potential advantages compared with attenuated PSM, so as to substitute the position of it in 0.3 k1 lithography era of DRAM. Firstly, some basic characteristics of both masks are studied, that is intensity distribution of diffraction orders and optical proximity effect etc. And then mask layouts are optimized through the resist patterning simulation for various critical layers of DRAM with CLM and attenuated PSM, respectively. Resolution performances such as exposure latitude and DOF margin and mask error enhancing factor etc. are compared through the simulations and experiments. In addition, it is also studied in the point of mask manufacturing of CLM such as phase control issues, defect printability, mask polarity, and so forth.


Archive | 2009

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Jae Chang Jung; Cheol Kyu Bok; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same

Jae Chang Jung; Cheol Kyu Bok; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Polymer for immersion lithography, photoresist composition containing the same, method of manufacturing a semiconductor device, and semiconductor device

Jae Chang Jung; Cheol Kyu Bok; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Photoacid generating polymer, its preparation method and top anti-reflective coating composition comprising the same

Jae Chang Jung; Cheol Kyu Bok; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same

Jae Chang Jung; Cheol Kyu Bok; Sam Young Kim; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device

Jae Chang Jung; Cheol Kyu Bok; Chang Moon Lim; Seung Chan Moon


Archive | 2005

Polymer material for upper antireflection film, its manufacturing method, and composition for upper antireflection film containing the same

Cheol Kyu Bok; Jae-Chang Jung; Chang Moon Lim; Moon Seung-Chan; チャン ユン ジャエ; チャン ムーン スーン; キュ ボク チェオル; ムーン リム チャン

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